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GigaDevice Semicon Beijing GD55LE511MEWIGR product image
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GigaDevice Semicon Beijing GD55LE511MEWIGR

Produttore
GigaDevice Semicon BeijingAsian Brands
Cod. Prod.
GD55LE511MEWIGR
Cod. LCSC
C21296416
Imballo
-
Numero Cliente
Attr. chiave
512Mbit 1.65V~2V 133MHz SPI Memory
Scheda TecnicaGigaDevice Semicon Beijing GD55LE511MEWIGR
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 4.9839$ 4.98
200+$ 1.9884$ 397.68
500+$ 1.9223$ 961.15
1,000+$ 1.8901$ 1890.10
Package Standard3000/Full Reel
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreGigaDevice Semicon Beijing
Imballo-
Operating Temperature-40℃~+85℃
Features-
Memory Size512Mbit
Voltage - Supply1.65V~2V
Clock Frequency133MHz
InterfaceSPI
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Caratteristiche

Traduzione AI
  • Power Supply Voltage: 2.7V~3.6V
  • High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
  • Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
  • Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
  • Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
  • Power Supply Voltage: 1.7V~2.0V
  • High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
  • Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
  • Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
  • Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC