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TI TLV8542RUGR

Producent
Nr części prod.
TLV8542RUGR
Nr LCSC
C2058093
Opak.
X2-QFN-8(1.5x1.5)
Numer Klienta
Klucz. cechy
500nA RRIO nano-power operational amplifier
Karta KatalogowaTI TLV8542RUGR
Zgodność z RoHS2 dokumentów dostępnych
Na stanie: 5,103
5,103 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.Suma całkowita
1+$ 0.6015$ 0.60
10+$ 0.4933$ 4.93
30+$ 0.4376$ 13.13
100+$ 0.3835$ 38.35
500+$ 0.3508$ 175.40
1,000+$ 0.3344$ 334.40
Standardowa Obudowa3000/Full Reel
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ProducentTI
Opak.X2-QFN-8(1.5x1.5)
Output Current15mA
Number of Channels2
Vos - Input Offset Voltage3.1mV
Slew Rate3.5V/ms
Input Offset Current(Ios)0.1pA
Operating Temperature-40℃~+125℃
Common Mode Rejection Ratio(CMRR)80dB
Ib - Input Bias Current0.1pA
Input Offset Voltage Drift(Vos TC)800nV/℃
Quiescent Current550nA
Gain Bandwidth Product8kHz
FeaturesBuilt-in compensation;EMI filtering/RF suppression
Input Voltage Noise Density264nV/√Hz@1kHz
Dual Supply-
Rail to RailRail-to-Rail Input, Rail-to-Rail Output
Single Supply1.7V~3.6V

Opis

Tłumaczenie AI

The TLV854x ultra-low-power operational amplifiers are suitable for cost-optimized sensing applications in wireless and low-power wired devices. The TLV854x series of operational amplifiers can minimize the power consumption of devices such as motion detection security systems (e.g., microwave and PIR motion sensing systems) that place a high emphasis on battery life. The complementary metal-oxide-semiconductor (CMOS) input stage of such devices is carefully designed to achieve ultra-low femtoampere offset current, thereby reducing IBIAS and IOS errors that would otherwise affect sensitive applications. Examples of such applications include transimpedance amplifier (TIA) configurations with megaohm feedback resistors and high source impedance sensing applications. Additionally, the built-in EMI protection reduces the device's sensitivity to unwanted RF signals emitted by mobile phones, WiFi, radio transmitters, and tag readers.

Funkcje

Tłumaczenie AI
  • Nanoamp supply current: 500nA/channel
  • Offset voltage: 3.1mV (maximum)
  • TcVos: 0.8μV/°C
  • Gain bandwidth: 8kHz
  • Unity-gain stable
  • Low input bias current: 100fA
  • Wide supply voltage range: 1.7V to 3.6V
  • Rail-to-rail input and output (RRIO)
  • Temperature range: -40°C to +125°C
  • Industry-standard packages: quad 14-pin TSSOP and SOIC, dual 8-pin SOIC, single 5-pin SOT-23, leadless package (dual 8-pin X2QFN)

Zastosowania

Tłumaczenie AI
  • Motion detector using PIR sensor SNAA301
  • Motion detector using microwave sensor
  • Gas detector
  • Ionization smoke alarm
  • Temperature control device
  • Remote sensor, IoT
  • RFID reader and tag
  • Portable medical device
  • Blood glucose monitoring