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MACOM PH1214-110M
| Hersteller | |
| Herst.-Teilenr. | PH1214-110M |
| LCSC-Nr. | C20344506 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 70V 350W 10.5A NPN Bipolar RF Transistors RoHS |
| Datenblatt | MACOM PH1214-110M |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 70V | |
| Pd - Power Dissipation | 350W | |
| Current - Collector(Ic) | 10.5A | |
| type | NPN | |
| Number | 1 NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 70V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 350W | |
| Current - Collector(Ic) | 10.5A | |
| type | NPN | |
| Number | 1 NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- NPN silicon microwave power transistors
- Common base configuration
- Broadband Class C operation
- High efficiency inter-digitized geometry
- Diffused emitter ballasting resistors
- Gold metallization system
- Internal input and output impedance matching
- Hermetic metal/ceramic package
- RoHS compliant
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| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 396.4132 | $ 396.41 |
| 200+ | $ 158.1723 | $ 31634.46 |
| 500+ | $ 152.8869 | $ 76443.45 |
| 1,000+ | $ 150.2749 | $ 150274.90 |
Standardgehäuse1/Full Bag | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 70V | |
| Pd - Power Dissipation | 350W | |
| Current - Collector(Ic) | 10.5A | |
| type | NPN | |
| Number | 1 NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 70V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 350W | |
| Current - Collector(Ic) | 10.5A | |
| type | NPN | |
| Number | 1 NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- NPN silicon microwave power transistors
- Common base configuration
- Broadband Class C operation
- High efficiency inter-digitized geometry
- Diffused emitter ballasting resistors
- Gold metallization system
- Internal input and output impedance matching
- Hermetic metal/ceramic package
- RoHS compliant
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |