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onsemi FCPF400N80Z
| Hersteller | |
| Herst.-Teilenr. | FCPF400N80Z |
| LCSC-Nr. | C202134 |
| Verp. | TO-220F-3 |
| Kundennummer | |
| Hauptmerkm. | 35.7W 800V 14A 4.5V 400mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi FCPF400N80Z |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 70pF | |
| Pd - Power Dissipation | 35.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 400mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.35nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 70pF | |
| Pd - Power Dissipation | 35.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 14A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 400mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.35nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology to achieve excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while delivering superior switching performance, dv/dt rate, and higher avalanche energy. In addition, the integrated gate-source ESD diode can withstand HBM surge stress exceeding 2kV. As a result, SuperFET II MOSFETs are ideally suited for switched-mode power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power supplies.
Merkmale
- Typical R<sub>DS(on)</sub> = 340 mΩ
- Ultra-low gate charge (typical Q<sub>g</sub> = 43 nC)
- Low E<sub>oss</sub> (typical 4.1 μJ @ 400 V)
- Low effective output capacitance (typical C<sub>oss(eff.)</sub> = 138 pF)
- 100% avalanche tested
- RoHS compliant
- Improved ESD capability
Anwendungen
- AC/DC Power Supply - LED Lighting
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 6.0778 | $ 6.08 |
| 10+ | $ 5.5043 | $ 55.04 |
| 50+ | $ 5.1615 | $ 258.08 |
| 100+ | $ 4.8171 | $ 481.71 |
| 500+ | $ 4.6578 | $ 2328.90 |
| 1,000+ | $ 4.5847 | $ 4584.70 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 70pF | |
| Pd - Power Dissipation | 35.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 400mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.35nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 70pF | |
| Pd - Power Dissipation | 35.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 14A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 400mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.35nF | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology to achieve excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while delivering superior switching performance, dv/dt rate, and higher avalanche energy. In addition, the integrated gate-source ESD diode can withstand HBM surge stress exceeding 2kV. As a result, SuperFET II MOSFETs are ideally suited for switched-mode power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power supplies.
Merkmale
- Typical R<sub>DS(on)</sub> = 340 mΩ
- Ultra-low gate charge (typical Q<sub>g</sub> = 43 nC)
- Low E<sub>oss</sub> (typical 4.1 μJ @ 400 V)
- Low effective output capacitance (typical C<sub>oss(eff.)</sub> = 138 pF)
- 100% avalanche tested
- RoHS compliant
- Improved ESD capability
Anwendungen
- AC/DC Power Supply - LED Lighting
C202134 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| MS20N85ICT1 | MASPOWER | TO-220F | 40 | $ 1.121 | ||
| FCPF290N80 | onsemi | TO-220F | 1 | $ 4.2663 | ||
| RSE80R180F | REASUNOS | TO-220F | 36 | $1.9417 $2.0438 | ||
| RSE80R250F | REASUNOS | TO-220F | 185 | $1.3216 $1.3911 | ||
| NTPF360N80S3Z-VB | VBsemi Elec | TO-220F | 2 | $2.2417 $2.6372 | ||
| TPA80R250A | WUXI UNIGROUP MICRO | TO-220F | 0 | $ 3.5141 | ||
| TPA80R180M | WUXI UNIGROUP MICRO | TO-220F-3 | 0 | $ 2.6417 | ||
| NCE80T320F | NCE | TO-220F-3 | 0 | $ 2.6531 | ||
| STF23N80K5 | ST | TO-220F-3 | 0 | $ 6.3003 | ||
| STFU15N80K5 | ST | TO-220FP | 0 | $ 3.1161 |