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AGMSEMI AGM2309EL
| Hersteller | AGMSEMIAsian Brands |
| Herst.-Teilenr. | AGM2309EL |
| LCSC-Nr. | C19633862 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 60V 2A SOT-23 |
| Datenblatt | AGMSEMI AGM2309EL |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM2309EL combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). The device is ideally suited for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Low R<sub>DS(ON)</sub> for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
Anwendungen
KI-Übersetzung
- MB/VGA core voltage
- Secondary-side synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
Vorrätig: 500
500 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0572 | $ 0.57 |
| 100+ | $ 0.0462 | $ 4.62 |
| 300+ | $ 0.0407 | $ 12.21 |
| 3,000+ | $ 0.0358 | $ 107.40 |
| 6,000+ | $ 0.0325 | $ 195.00 |
| 9,000+ | $ 0.0309 | $ 278.10 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5.4nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM2309EL combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). The device is ideally suited for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Low R<sub>DS(ON)</sub> for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
Anwendungen
KI-Übersetzung
- MB/VGA core voltage
- Secondary-side synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |