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JSMSEMI 2SK2926-JSM
| Produttore | JSMSEMIAsian Brands |
| Cod. Prod. | 2SK2926-JSM |
| Cod. LCSC | C18193045 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | 60V 30A 2.5V 40W 40mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | JSMSEMI 2SK2926-JSM |
| Conformità RoHS | 6 documenti disponibili |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 40mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 20nC@30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| RDS(on) | 40mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 20nC@30V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Caratteristiche
Traduzione AI
- VDS = 60V, ID = 30A, RDS(ON) < 30mΩ at VGS = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal performance
Applicazioni
Traduzione AI
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Cameras
- LCD Monitor Inverters
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.425 | $ 0.43 |
| 200+ | $ 0.1696 | $ 33.92 |
| 500+ | $ 0.164 | $ 82.00 |
| 1,000+ | $ 0.1612 | $ 161.20 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 40mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 20nC@30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | JSMSEMI | |
| Imballo | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 90pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| RDS(on) | 40mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 20nC@30V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Caratteristiche
Traduzione AI
- VDS = 60V, ID = 30A, RDS(ON) < 30mΩ at VGS = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal performance
Applicazioni
Traduzione AI
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Cameras
- LCD Monitor Inverters
C18193045 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| 20N06L-JSM | JSMSEMI | TO-252 | 0 | $ 0.3777 | ||
| FQD20N06-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| AOD442-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| 25N06L-TN3-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| 2SK3385-JSM | JSMSEMI | TO-252 | 0 | $ 0.3777 | ||
| 30N06L-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| AM30N06-39D-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| AOD4130-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| AP9971GH-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| AP9979GH-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| CEU20N06-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| CEU6060N-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| CEU6336-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| CMD20N06L-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| DMN6040SK3-13-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| DTU40N06-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| FQD20N06LE-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| FQD30N06-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| FTD36N06N-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 | ||
| HUF75321D3S-JSM | JSMSEMI | TO-252 | 0 | $ 0.425 |