GeneSiC Semiconductor FR16MR05
| Hersteller | |
| Herst.-Teilenr. | FR16MR05 |
| LCSC-Nr. | C17548992 |
| Verp. | DO-4 |
| Kundennummer | |
| Hauptmerkm. | 500ns 1kV 1.1V@16A 16A DO-4 Single Diodes RoHS |
| Datenblatt | GeneSiC Semiconductor FR16MR05 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 1kV | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@16A | |
| Reverse Leakage Current (Ir) | 25uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 16A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1kV | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@16A | |
| Reverse Leakage Current (Ir) | 25uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 16A |
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Beschreibung
KI-Übersetzung
Silicon fast recovery diode, repetitive peak reverse voltage VRRM 800V - 1000V, forward current IF 16A.
Merkmale
KI-Übersetzung
- High surge capability
- VRRM ratings from 800V to 1000V
- Insensitive to ESD
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 19.1982 | $ 19.20 |
| 250+ | $ 7.6613 | $ 1915.33 |
| 500+ | $ 7.404 | $ 3702.00 |
| 1,000+ | $ 7.2784 | $ 7278.40 |
Standardgehäuse250/Full Bag | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 1kV | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@16A | |
| Reverse Leakage Current (Ir) | 25uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 16A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | DO-4 | |
| Reverse Recovery Time (trr) | 500ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1kV | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@16A | |
| Reverse Leakage Current (Ir) | 25uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 16A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Silicon fast recovery diode, repetitive peak reverse voltage VRRM 800V - 1000V, forward current IF 16A.
Merkmale
KI-Übersetzung
- High surge capability
- VRRM ratings from 800V to 1000V
- Insensitive to ESD
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

