MICROCHIP APTM10AM02FG
| Producent | |
| Nr części prod. | APTM10AM02FG |
| Nr LCSC | C17435289 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 100V 495A 2.5mΩ@10V 1.25kW 4V 2 N-Channel FET, MOSFET Arrays RoHS |
| Karta Katalogowa | MICROCHIP APTM10AM02FG |
| Zgodność z RoHS | 2 dokumentów dostępnych |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 495A | |
| RDS(on) | 2.5mΩ@10V | |
| Pd - Power Dissipation | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | - | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.9nF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40nF | |
| Gate Charge(Qg) | 1.36uC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 15.7nF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 495A | |
| RDS(on) | 2.5mΩ@10V | |
| Pd - Power Dissipation | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Type | - | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.9nF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40nF | |
| Gate Charge(Qg) | 1.36uC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 15.7nF |
Opis
PD20015C is a common-source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial and industrial applications. In common-source mode, it operates at frequencies up to 2 GHz at 13.6 V. The PD20015C delivers excellent gain, linearity, and reliability enabled by ST's latest LDMOS technology. The outstanding linearity performance of the PD20015C makes it an ideal solution for mobile applications.
Funkcje
- Power MOS V FREDFETs
- Low on-state resistance RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Fast intrinsic diode
- Rugged and durable
- Kelvin source for easy gate drive
- Ultra-low stray inductance
- Symmetrical design
- M5 power connectors
- High integration
Zastosowania
- Welding converters
- Switching power supplies
- Uninterruptible power supplies
- Motor control
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 375.4869 | $ 375.49 |
| 200+ | $ 352.6578 | $ 70531.56 |
| 500+ | $ 340.8729 | $ 170436.45 |
| 1,000+ | $ 335.0499 | $ 335049.90 |
Standardowa Obudowa1/Full Bag | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 495A | |
| RDS(on) | 2.5mΩ@10V | |
| Pd - Power Dissipation | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | - | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.9nF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40nF | |
| Gate Charge(Qg) | 1.36uC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 15.7nF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 495A | |
| RDS(on) | 2.5mΩ@10V | |
| Pd - Power Dissipation | 1.25kW | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Type | - | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.9nF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40nF | |
| Gate Charge(Qg) | 1.36uC@10V | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 15.7nF |
Opis
PD20015C is a common-source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial and industrial applications. In common-source mode, it operates at frequencies up to 2 GHz at 13.6 V. The PD20015C delivers excellent gain, linearity, and reliability enabled by ST's latest LDMOS technology. The outstanding linearity performance of the PD20015C makes it an ideal solution for mobile applications.
Funkcje
- Power MOS V FREDFETs
- Low on-state resistance RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Fast intrinsic diode
- Rugged and durable
- Kelvin source for easy gate drive
- Ultra-low stray inductance
- Symmetrical design
- M5 power connectors
- High integration
Zastosowania
- Welding converters
- Switching power supplies
- Uninterruptible power supplies
- Motor control
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

