onsemi NSR01L30NXT5G
| Producent | |
| Nr części prod. | NSR01L30NXT5G |
| Nr LCSC | C154565 |
| Opak. | 0201 |
| Numer Klienta | |
| Klucz. cechy | DIODE SCHOTTKY 30V 0201 |
| Karta Katalogowa | onsemi NSR01L30NXT5G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 11 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | onsemi | |
| Opak. | 0201 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 530mV@100mA | |
| Reverse Leakage Current (Ir) | 3uA@30V | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 100mA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | onsemi | |
| Opak. | 0201 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Typ | Opis | |
|---|---|---|
| Voltage - Forward(Vf@If) | 530mV@100mA | |
| Reverse Leakage Current (Ir) | 3uA@30V | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 100mA |
Opis
These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No- lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
Funkcje
- Very Low Forward Voltage Drop - 400 mV @ 10 mA
- Low Reverse Current - 0.2 μA @ 10 V VR
- 100 mA of Continuous Forward Current
- ESD Rating - Human Body Model: Class 3B - Machine Model: Class C
- Power Dissipation of 312 mW with Minimum Trace
- Very High Switching Speed
- Low Capacitance - CT = 7 pF
- This is a Halide- Free Device
- This is a Pb- Free Device
Zastosowania
- LCD and Keypad Backlighting
- Camera Photo Flash
- Buck and Boost dc- dc Converters
- Reverse Voltage and Current Protection
- Clamping & Protection
- Mobile Handsets
- MP3 Players
- Digital Camera and Camcorders
- Notebook PCs & PDAs
- GPS
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.3308 | $ 1.65 |
| 50+ | $ 0.2645 | $ 13.23 |
| 150+ | $ 0.2361 | $ 35.42 |
| 500+ | $ 0.2007 | $ 100.35 |
| 2,500+ | $ 0.1757 | $ 439.25 |
| 5,000+ | $ 0.1662 | $ 831.00 |
Standardowa Obudowa5000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | onsemi | |
| Opak. | 0201 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 530mV@100mA | |
| Reverse Leakage Current (Ir) | 3uA@30V | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 100mA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | onsemi | |
| Opak. | 0201 | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Typ | Opis | |
|---|---|---|
| Voltage - Forward(Vf@If) | 530mV@100mA | |
| Reverse Leakage Current (Ir) | 3uA@30V | |
| Non-Repetitive Peak Forward Surge Current | 4A | |
| Current - Rectified | 100mA |
Opis
These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No- lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
Funkcje
- Very Low Forward Voltage Drop - 400 mV @ 10 mA
- Low Reverse Current - 0.2 μA @ 10 V VR
- 100 mA of Continuous Forward Current
- ESD Rating - Human Body Model: Class 3B - Machine Model: Class C
- Power Dissipation of 312 mW with Minimum Trace
- Very High Switching Speed
- Low Capacitance - CT = 7 pF
- This is a Halide- Free Device
- This is a Pb- Free Device
Zastosowania
- LCD and Keypad Backlighting
- Camera Photo Flash
- Buck and Boost dc- dc Converters
- Reverse Voltage and Current Protection
- Clamping & Protection
- Mobile Handsets
- MP3 Players
- Digital Camera and Camcorders
- Notebook PCs & PDAs
- GPS
C154565 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| TPNSR02F30NXT5G | TECH PUBLIC | 0201 | 10,910 | $0.0249 $0.0262 | ||
| NSR02L30NXT5G | onsemi | 0201 | 104 | $ 0.7929 | ||
| TPNSR01F30NXT5G | TECH PUBLIC | 0201 | 18,210 | $0.0369 $0.0388 | ||
| TPMEG3002AESFYL | TECH PUBLIC | 0201 | 15,830 | $0.0506 $0.0532 | ||
| TPNSR02L30NXT5G | TECH PUBLIC | 0201 | 14,800 | $0.0457 $0.0481 | ||
| NSR01F30NXT5G | onsemi | 0201 | 5 | $ 0.8318 | ||
| BAT30F4 | TECH PUBLIC | 0201 | 24,520 | $ 0.0346 | ||
| PMEG3002AESFYL | Nexperia | 0201 | 8,975 | $ 0.0913 | ||
| TPNSR01L30NXT5G | TECH PUBLIC | DFN0603-2 | 6,620 | $ 0.0303 | ||
| NSR02F30NXT5G | onsemi | 0201 | 0 | $ 0.1462 | ||
| NSR05402NXT5G | onsemi | 0201 | 0 | $ 0.4087 |



