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EDA-ModelleEasyEDA
TOSHIBA SSM3K2615R,LF
| Hersteller | |
| Herst.-Teilenr. | SSM3K2615R,LF |
| LCSC-Nr. | C146276 |
| Verp. | SOT-23F |
| Kundennummer | |
| Hauptmerkm. | 60V 2A 2V 1W 580mΩ@3.3V 1 N-channel SOT-23F Single FETs, MOSFETs RoHS |
| Datenblatt | TOSHIBA SSM3K2615R,LF |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 580mΩ@3.3V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 580mΩ@3.3V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | - |
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Merkmale
KI-Übersetzung
- AEC - Q101 Qualified
- 3.3 - V gate drive voltage
- Low drain - source on - resistance: RDS(ON) = 380 mΩ (typ.) (VGS = 3.3 V, ID = 0.5 A); RDS(ON) = 330 mΩ (typ.) (VGS = 4.0 V, ID = 1.0 A); RDS(ON) = 230 mΩ (typ.) (VGS = 10 V, ID = 1.0 A)
Anwendungen
KI-Übersetzung
- Load Switches
- Motor Drivers
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2283 | $ 1.14 |
| 50+ | $ 0.2251 | $ 11.26 |
| 150+ | $ 0.2229 | $ 33.44 |
| 500+ | $ 0.2207 | $ 110.35 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 580mΩ@3.3V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-23F | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 580mΩ@3.3V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC - Q101 Qualified
- 3.3 - V gate drive voltage
- Low drain - source on - resistance: RDS(ON) = 380 mΩ (typ.) (VGS = 3.3 V, ID = 0.5 A); RDS(ON) = 330 mΩ (typ.) (VGS = 4.0 V, ID = 1.0 A); RDS(ON) = 230 mΩ (typ.) (VGS = 10 V, ID = 1.0 A)
Anwendungen
KI-Übersetzung
- Load Switches
- Motor Drivers
C146276 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SI2310A | FUXINSEMI | SOT-23 | 2,840 | $0.0308 $0.0384 | ||
| SSM3K2615R,LXGF | TOSHIBA | SOT-23F | 3,705 | $ 0.2959 | ||
| TMG05N10MI | Tritech-MOS | SOT-23-3L | 3,000 | $0.0486 $0.0511 | ||
| XCHS1005 | XCH | SOT-23 | 2,200 | $ 0.0359 | ||
| XRS1005 | XNRUSEMI | SOT-23 | 1,460 | $0.0352 $0.037 | ||
| XRS1005L | XNRUSEMI | SOT-23-3L | 2,820 | $0.0405 $0.0426 | ||
| FDN8601-HXY | HXY MOSFET | SOT-23-3L | 15 | $0.1719 $0.1809 | ||
| ST1002-HXY | HXY MOSFET | SOT-23-3L | 10 | $0.0755 $0.0794 | ||
| Si2328DS-T1-GE3-HXY | HXY MOSFET | SOT-23-3L | 5 | $ 0.1467 | ||
| TMG05N10AI | Tritech-MOS | SOT-23 | 0 | $0.0373 $0.0392 |