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Wuxi China Resources Huajing Microelectronics CS8N60FA9H
| Hersteller | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| Herst.-Teilenr. | CS8N60FA9H |
| LCSC-Nr. | C140753 |
| Verp. | TO-220F |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 600V 8A TO-220F |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS8N60FA9H |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.253nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.253nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Merkmale
KI-Übersetzung
- Fast Switching
- Low ON Resistance(Rdson≤1.2Ω)
- Low Gate Charge (Typical Data:29nC)
- Low Reverse transfer capacitances(Typical:15pF)
- 100% Single Pulse avalanche energy Test
Anwendungen
KI-Übersetzung
- Power switch circuit of adaptor and charger.
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7604 | $ 0.76 |
| 10+ | $ 0.6499 | $ 6.50 |
| 50+ | $ 0.593 | $ 29.65 |
| 100+ | $ 0.5378 | $ 53.78 |
| 500+ | $ 0.5053 | $ 252.65 |
| 1,000+ | $ 0.4891 | $ 489.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.253nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.253nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Merkmale
KI-Übersetzung
- Fast Switching
- Low ON Resistance(Rdson≤1.2Ω)
- Low Gate Charge (Typical Data:29nC)
- Low Reverse transfer capacitances(Typical:15pF)
- 100% Single Pulse avalanche energy Test
Anwendungen
KI-Übersetzung
- Power switch circuit of adaptor and charger.
C140753 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| CS10N70FA9R | Wuxi China Resources Huajing Microelectronics | TO-220F | 9 | $ 0.7555 | ||
| CS12N60FA9R | Wuxi China Resources Huajing Microelectronics | TO-220F | 1,000 | $ 0.6146 | ||
| CS8N65FA9H | Wuxi China Resources Huajing Microelectronics | TO-220F-3 | 0 | $ 0.7441 | ||
| CS10N65FA9R | Wuxi China Resources Huajing Microelectronics | TO-220F | 0 | $ 0.944 | ||
| CS10N70FA9D | Wuxi China Resources Huajing Microelectronics | TO-220F-3 | 0 | $ 0.9976 | ||
| CS10N60FA9R | Wuxi China Resources Huajing Microelectronics | TO-220F-3 | 0 | $ 0.7604 | ||
| CS12N65FA9H | Wuxi China Resources Huajing Microelectronics | TO-220F | 0 | $ 1.5012 | ||
| CS12N65FA9R | Wuxi China Resources Huajing Microelectronics | TO-220F | 0 | $ 0.9407 | ||
| CS12N60FA9H | Wuxi China Resources Huajing Microelectronics | TO-220F-3 | 0 | $ 0.8562 | ||
| CS10N80FA9D | Wuxi China Resources Huajing Microelectronics | TO-220F-3 | 0 | $ 1.0561 |