Nexperia BUK9Y22-100E,115
| Produttore | |
| Cod. Prod. | BUK9Y22-100E,115 |
| Cod. LCSC | C125993 |
| Imballo | LFPAK56-5 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 100V 49A LFPAK56-5 |
| Scheda Tecnica | Nexperia BUK9Y22-100E,115 |
| Conformità RoHS | 1 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | LFPAK56-5 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 254pF | |
| Current - Continuous Drain(Id) | 49A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss@Vds) | 178pF | |
| RDS(on) | 22mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.64nF | |
| Gate Charge(Qg) | 13.3nC@5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | LFPAK56-5 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 254pF | |
| Current - Continuous Drain(Id) | 49A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss@Vds) | 178pF | |
| RDS(on) | 22mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.64nF | |
| Gate Charge(Qg) | 13.3nC@5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Caratteristiche
Traduzione AI
- Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
Applicazioni
Traduzione AI
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Disponibile: 72
72 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.3233 | $ 1.32 |
| 10+ | $ 1.1072 | $ 11.07 |
| 30+ | $ 0.9876 | $ 29.63 |
| 100+ | $ 0.8533 | $ 85.33 |
| 500+ | $ 0.7927 | $ 396.35 |
| 1,500+ | $ 0.7665 | $ 1149.75 |
Package Standard1500/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | LFPAK56-5 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 254pF | |
| Current - Continuous Drain(Id) | 49A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss@Vds) | 178pF | |
| RDS(on) | 22mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.64nF | |
| Gate Charge(Qg) | 13.3nC@5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | LFPAK56-5 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 254pF | |
| Current - Continuous Drain(Id) | 49A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss@Vds) | 178pF | |
| RDS(on) | 22mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.64nF | |
| Gate Charge(Qg) | 13.3nC@5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Caratteristiche
Traduzione AI
- Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
Applicazioni
Traduzione AI
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
C125993 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



