onsemi MMUN2134LT1G
| 제조업체 | |
| 제조사 품번 | MMUN2134LT1G |
| LCSC 번호 | C891742 |
| 포장 | SOT-23 |
| 고객 번호 | |
| 주요 제원 | TRANS PREBIAS 50V SOT-23 |
| 데이터시트 | onsemi MMUN2134LT1G |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.47 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 900mV | |
| Input Voltage (VI(on)@Ic,Vce) | 2V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| 타입 | 설명 | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.47 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 900mV | |
| Input Voltage (VI(on)@Ic,Vce) | 2V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
개요
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
주요 특징
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
| 수량 | 단가 | 총액 |
|---|---|---|
| 10+ | $ 0.0468 | $ 0.47 |
| 100+ | $ 0.0461 | $ 4.61 |
| 300+ | $ 0.0457 | $ 13.71 |
| 1,000+ | $ 0.0452 | $ 45.20 |
표준 패키지3000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.47 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 900mV | |
| Input Voltage (VI(on)@Ic,Vce) | 2V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| 타입 | 설명 | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.47 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 900mV | |
| Input Voltage (VI(on)@Ic,Vce) | 2V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
개요
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
주요 특징
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C891742 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| SMMUN2134LT1G | onsemi | SOT-23-3(TO-236-3) | 1,385 | $ 0.0667 | ||
| MMUN2130LT1G | onsemi | SOT-23 | 3,190 | $ 0.1105 | ||
| MMUN2113LT1G | onsemi | SOT-23 | 1,230 | $ 0.0495 | ||
| SMMUN2113LT1G | onsemi | SOT-23 | 50 | $ 0.1598 | ||
| MMUN2131LT1G | onsemi | SOT-23-3 | 5 | $ 0.1675 | ||
| PDTB123ET,215 | Nexperia | SOT-23 | 2,550 | $ 0.0685 | ||
| PDTA123ET,215 | Nexperia | SOT-23 | 3,020 | $ 0.0369 | ||
| PDTA113ET,215 | Nexperia | SOT-23 | 3,000 | $ 0.0385 | ||
| PDTA124XT,215 | Nexperia | SOT-23 | 0 | $ 0.0652 | ||
| NSVMMUN2131LT1G | onsemi | SOT-23-3(TO-236-3) | 0 | $ 0.0555 |



