ST SCT012H90G3AG
| 제조업체 | |
| 제조사 품번 | SCT012H90G3AG |
| LCSC 번호 | C5268811 |
| 포장 | H2PAK-7 |
| 고객 번호 | |
| 주요 제원 | 110A 625W H2PAK-7 Single FETs, MOSFETs |
| 데이터시트 | ST SCT012H90G3AG |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-7 | |
| Current - Continuous Drain(Id) | 110A | |
| Pd - Power Dissipation | 625W |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-7 |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 110A | |
| Pd - Power Dissipation | 625W |
개요
This SiC power MOSFET is developed using STMicroelectronics' (ST) advanced and innovative 3rd generation SiC MOSFET technology. The device features an extremely low on-resistance (RDS(on)) across the full temperature range, combined with low capacitance and exceptional switching capability, enabling improved application performance in terms of frequency, energy efficiency, system size reduction, and weight savings.
주요 특징
- AEC-Q101 compliant
- Ultra-low RDS(on) across full temperature range
- High-speed switching performance
- Fast and robust intrinsic body diode
- Source sense pin for improved efficiency
응용 분야
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On-board charger (OBC)
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 35.6963 | $ 35.70 |
| 10+ | $ 34.8466 | $ 348.47 |
표준 패키지1000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-7 | |
| Current - Continuous Drain(Id) | 110A | |
| Pd - Power Dissipation | 625W |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-7 |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 110A | |
| Pd - Power Dissipation | 625W |
개요
This SiC power MOSFET is developed using STMicroelectronics' (ST) advanced and innovative 3rd generation SiC MOSFET technology. The device features an extremely low on-resistance (RDS(on)) across the full temperature range, combined with low capacitance and exceptional switching capability, enabling improved application performance in terms of frequency, energy efficiency, system size reduction, and weight savings.
주요 특징
- AEC-Q101 compliant
- Ultra-low RDS(on) across full temperature range
- High-speed switching performance
- Fast and robust intrinsic body diode
- Source sense pin for improved efficiency
응용 분야
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On-board charger (OBC)
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |