WILLSEMI ESD5451N-2/TR
| Hersteller | WILLSEMIAsian Brands |
| Herst.-Teilenr. | ESD5451N-2/TR |
| LCSC-Nr. | C239604 |
| Verp. | DFN1006-2L |
| Kundennummer | |
| Hauptmerkm. | TVS DIODE 5VWM 10VC DFN1006-2L |
| Datenblatt | WILLSEMI ESD5451N-2/TR |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | WILLSEMI | |
| Verp. | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Peak Pulse Current (Ipp) | 8A@8/20us | |
| Voltage - Breakdown | 5.1V | |
| Number of Channels | 1 | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | WILLSEMI | |
| Verp. | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Peak Pulse Current (Ipp) | 8A@8/20us | |
| Voltage - Breakdown | 5.1V |
| Typ | Beschreibung | |
|---|---|---|
| Number of Channels | 1 | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
Beschreibung
The ESD5451N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. The ESD5451N may be used to provide ESD protection up to ±30 kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 8A (8/20 μs) according to IEC61000-4-5. The ESD5451N is available in DFN1006-2L package. Standard products are Pb -free and Halogen-free.
Merkmale
- Reverse stand-off voltage: ±5V
- Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30 kV (contact and air discharge)
- IEC61000-4-4 (EFT): 40A (5/50ns)
- IEC61000-4-5 (surge): 8A (8/20 μs)
- Capacitance: C_J = 17.5 pF typ.
- Low leakage current: l_R < 1 nA typ.
- Low clamping voltage: V_CL = 9V typ.
- Solid-state silicon technology
Anwendungen
- Cellular handsets
- Tablets
- Laptops
- Other portable devices
- Network communication devices
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 50+ | $ 0.0145 | $ 0.73 |
| 500+ | $ 0.0117 | $ 5.85 |
| 1,500+ | $ 0.0102 | $ 15.30 |
| 10,000+ | $ 0.0092 | $ 92.00 |
| 20,000+ | $ 0.0084 | $ 168.00 |
| 50,000+ | $ 0.008 | $ 400.00 |
Standardgehäuse10000/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | WILLSEMI | |
| Verp. | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Peak Pulse Current (Ipp) | 8A@8/20us | |
| Voltage - Breakdown | 5.1V | |
| Number of Channels | 1 | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | WILLSEMI | |
| Verp. | DFN1006-2L | |
| Clamping Voltage | 10V | |
| Peak Pulse Current (Ipp) | 8A@8/20us | |
| Voltage - Breakdown | 5.1V |
| Typ | Beschreibung | |
|---|---|---|
| Number of Channels | 1 | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1nA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 5V |
Beschreibung
The ESD5451N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. The ESD5451N may be used to provide ESD protection up to ±30 kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 8A (8/20 μs) according to IEC61000-4-5. The ESD5451N is available in DFN1006-2L package. Standard products are Pb -free and Halogen-free.
Merkmale
- Reverse stand-off voltage: ±5V
- Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30 kV (contact and air discharge)
- IEC61000-4-4 (EFT): 40A (5/50ns)
- IEC61000-4-5 (surge): 8A (8/20 μs)
- Capacitance: C_J = 17.5 pF typ.
- Low leakage current: l_R < 1 nA typ.
- Low clamping voltage: V_CL = 9V typ.
- Solid-state silicon technology
Anwendungen
- Cellular handsets
- Tablets
- Laptops
- Other portable devices
- Network communication devices
C239604 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
