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onsemi LE25S80FDTWG

Produttore
Cod. Prod.
LE25S80FDTWG
Cod. LCSC
C905136
Imballo
VSOIC-8-NB
Numero Cliente
Attr. chiave
8Mbit 1.65V~1.95V 40MHz SPI VSOIC-8-NB Memory
Scheda Tecnicaonsemi LE25S80FDTWG
Parti alternative10
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 1.8344$ 1.83
200+$ 0.7103$ 142.06
500+$ 0.685$ 342.50
1,000+$ 0.6723$ 672.30
Package Standard3000/Full Reel
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
Produttoreonsemi
ImballoVSOIC-8-NB
Operating Temperature-40℃~+90℃
Features-
Memory Size8Mbit
Voltage - Supply1.65V~1.95V
Program / Erase Cycles100,000 cycles
Clock Frequency40MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)800us
Standby Supply Current50uA
InterfaceSPI

Descrizione

Traduzione AI

The LE25S80FD is a SPI bus flash memory device with a 8M bit (1024K x 8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S80FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S80FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.

Caratteristiche

Traduzione AI
  • Read/write operations enabled by single 1.8V power supply: 1.65 to 1.95V supply voltage range
  • Operating frequency: 40MHz
  • Temperature range: -40 to +90℃
  • Serial interface: SPI mode 0, mode 3 supported
  • Sector size: 4K bytes/small sector, 64K bytes/sector
  • Small sector erase, sector erase, chip erase functions
  • Page program function (256 bytes / page)
  • Block protect function
  • Data retention period: 20 years
  • Status functions: Ready/busy information, protect information
  • Highly reliable read/write
  • Number of rewrite times: 100,000 times
  • Small sector erase time: 40ms (typ.), 150ms (max.)
  • Sector erase time: 80ms (typ.), 250ms (max.)
  • Chip erase time: 500ms (typ.), 6.0s (max.)
  • Page program time: 0.8ms/256 bytes (typ.), 1.0ms/256 bytes (max.)
  • Package: VSOIC8 NB, CASE 753AA

Applicazioni

Traduzione AI
  • Portable information devices

Parti alternative

MPNProduttoreImballaggioDisponibilitàPrezzo unitario
SST25WF080B-40I/SNMICROCHIPSOIC-81$ 3.4668
LE25S81AMDTWGonsemiSOIC-85$ 2.242
SST25WF080BT-40E/SNMICROCHIPSOIC-80$ 1.5559
SST25WF080BT-40I/SNMICROCHIPSOIC-80$ 1.4856
IS25WP080D-JNLEISSISOIC-80$ 0.5454
LE25S81FDTWGonsemiSOIC-80$ 0.5121
LE25S81MCTWGonsemiSOP-80$ 0.5013
SST25WF080B-40E/SNMICROCHIPSOIC-80$ 0.4631
W25Q80BWSSIGWinbondSOIC-80$ 0.8375
IS25WP080D-JNLE-TRISSISOIC-80$ 0.1448