onsemi LE25S80FDTWG
| Produttore | |
| Cod. Prod. | LE25S80FDTWG |
| Cod. LCSC | C905136 |
| Imballo | VSOIC-8-NB |
| Numero Cliente | |
| Attr. chiave | 8Mbit 1.65V~1.95V 40MHz SPI VSOIC-8-NB Memory |
| Scheda Tecnica | onsemi LE25S80FDTWG |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | VSOIC-8-NB | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 800us | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | VSOIC-8-NB | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 800us | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
Descrizione
The LE25S80FD is a SPI bus flash memory device with a 8M bit (1024K x 8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S80FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S80FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Caratteristiche
- Read/write operations enabled by single 1.8V power supply: 1.65 to 1.95V supply voltage range
- Operating frequency: 40MHz
- Temperature range: -40 to +90℃
- Serial interface: SPI mode 0, mode 3 supported
- Sector size: 4K bytes/small sector, 64K bytes/sector
- Small sector erase, sector erase, chip erase functions
- Page program function (256 bytes / page)
- Block protect function
- Data retention period: 20 years
- Status functions: Ready/busy information, protect information
- Highly reliable read/write
- Number of rewrite times: 100,000 times
- Small sector erase time: 40ms (typ.), 150ms (max.)
- Sector erase time: 80ms (typ.), 250ms (max.)
- Chip erase time: 500ms (typ.), 6.0s (max.)
- Page program time: 0.8ms/256 bytes (typ.), 1.0ms/256 bytes (max.)
- Package: VSOIC8 NB, CASE 753AA
Applicazioni
- Portable information devices
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.8344 | $ 1.83 |
| 200+ | $ 0.7103 | $ 142.06 |
| 500+ | $ 0.685 | $ 342.50 |
| 1,000+ | $ 0.6723 | $ 672.30 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | VSOIC-8-NB | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 800us | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | VSOIC-8-NB | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 8Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 40MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 800us | |
| Standby Supply Current | 50uA | |
| Interface | SPI |
Descrizione
The LE25S80FD is a SPI bus flash memory device with a 8M bit (1024K x 8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S80FD is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S80FD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Caratteristiche
- Read/write operations enabled by single 1.8V power supply: 1.65 to 1.95V supply voltage range
- Operating frequency: 40MHz
- Temperature range: -40 to +90℃
- Serial interface: SPI mode 0, mode 3 supported
- Sector size: 4K bytes/small sector, 64K bytes/sector
- Small sector erase, sector erase, chip erase functions
- Page program function (256 bytes / page)
- Block protect function
- Data retention period: 20 years
- Status functions: Ready/busy information, protect information
- Highly reliable read/write
- Number of rewrite times: 100,000 times
- Small sector erase time: 40ms (typ.), 150ms (max.)
- Sector erase time: 80ms (typ.), 250ms (max.)
- Chip erase time: 500ms (typ.), 6.0s (max.)
- Page program time: 0.8ms/256 bytes (typ.), 1.0ms/256 bytes (max.)
- Package: VSOIC8 NB, CASE 753AA
Applicazioni
- Portable information devices
C905136 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SST25WF080B-40I/SN | MICROCHIP | SOIC-8 | 1 | $ 3.4668 | ||
| LE25S81AMDTWG | onsemi | SOIC-8 | 5 | $ 2.242 | ||
| SST25WF080BT-40E/SN | MICROCHIP | SOIC-8 | 0 | $ 1.5559 | ||
| SST25WF080BT-40I/SN | MICROCHIP | SOIC-8 | 0 | $ 1.4856 | ||
| IS25WP080D-JNLE | ISSI | SOIC-8 | 0 | $ 0.5454 | ||
| LE25S81FDTWG | onsemi | SOIC-8 | 0 | $ 0.5121 | ||
| LE25S81MCTWG | onsemi | SOP-8 | 0 | $ 0.5013 | ||
| SST25WF080B-40E/SN | MICROCHIP | SOIC-8 | 0 | $ 0.4631 | ||
| W25Q80BWSSIG | Winbond | SOIC-8 | 0 | $ 0.8375 | ||
| IS25WP080D-JNLE-TR | ISSI | SOIC-8 | 0 | $ 0.1448 |

