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Modelli EDAEasyEDA
onsemi NTMTSC1D5N08MC
| Produttore | |
| Cod. Prod. | NTMTSC1D5N08MC |
| Cod. LCSC | C894064 |
| Imballo | DFNW-8(8.4x8.3) |
| Numero Cliente | |
| Attr. chiave | 250W 80V 287A 3V 1.1mΩ@10V 1 N-channel N-Channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | onsemi NTMTSC1D5N08MC |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 8 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 2.555nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 287A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 1.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.42nF | |
| Gate Charge(Qg) | 101nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 2.555nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 287A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 1.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.42nF | |
| Gate Charge(Qg) | 101nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Compact package (8x8 mm) for space-constrained designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applicazioni
Traduzione AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling equipment
- BMS/energy storage, home automation
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 5.4481 | $ 5.45 |
| 200+ | $ 2.1089 | $ 421.78 |
| 500+ | $ 2.0344 | $ 1017.20 |
| 1,000+ | $ 1.9987 | $ 1998.70 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 2.555nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 287A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 1.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.42nF | |
| Gate Charge(Qg) | 101nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 2.555nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 287A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 1.1mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.42nF | |
| Gate Charge(Qg) | 101nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Compact package (8x8 mm) for space-constrained designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applicazioni
Traduzione AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling equipment
- BMS/energy storage, home automation
C894064 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NVMTSC1D3N08M7TXG | onsemi | DFNW-8(8.4x8.3) | 15 | $ 7.1026 | ||
| NVMTS1D2N08H | onsemi | DFNW-8(8.4x8.3) | 12 | $ 7.8405 | ||
| NVMTS1D6N10MCTXG | onsemi | DFNW-8(8.3x8.4) | 10 | $ 13.1936 | ||
| NVMTS1D5N08H | onsemi | DFNW-8(8.3x8.4) | 5 | $ 6.7325 | ||
| NTMTSC1D6N10MCTXG | onsemi | DFNW-8(8.4x8.3) | 1 | $ 10.0492 | ||
| NTMTS1D5N08MC | onsemi | DFNW-8(8.4x8.3) | 0 | $ 5.6485 | ||
| NTMTS1D2N08H | onsemi | DFNW-8(8.4x8.3) | 0 | $ 5.6192 | ||
| NTMTS1D6N10MCTXG | onsemi | DFNW-8(8.4x8.3) | 0 | $ 13.9182 |