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EDA-ModelleEasyEDA
onsemi FDC642P
| Hersteller | |
| Herst.-Teilenr. | FDC642P |
| LCSC-Nr. | C890875 |
| Verp. | SSOT-6 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 20V 4A SSOT-6 |
| Datenblatt | onsemi FDC642P |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SSOT-6 | |
| Output Capacitance(Coss) | 110pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 925pF | |
| Gate Charge(Qg) | 16nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SSOT-6 | |
| Output Capacitance(Coss) | 110pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 925pF | |
| Gate Charge(Qg) | 16nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor's advanced PowerTrench? process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Merkmale
KI-Übersetzung
- Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
- Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
- Fast switching speed
- Low gate charge (11 nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM - 6 package: small footprint (72% smaller than standard SO - 8); low profile (1 mm thick)
- Termination lead - free and RoHS Compliant
Anwendungen
KI-Übersetzung
- Load switch
- Battery protection
- Power management
Vorrätig: 120
120 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4795 | $ 0.48 |
| 10+ | $ 0.3706 | $ 3.71 |
| 30+ | $ 0.3251 | $ 9.75 |
| 100+ | $ 0.2666 | $ 26.66 |
| 500+ | $ 0.2406 | $ 120.30 |
| 1,000+ | $ 0.226 | $ 226.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SSOT-6 | |
| Output Capacitance(Coss) | 110pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 925pF | |
| Gate Charge(Qg) | 16nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SSOT-6 | |
| Output Capacitance(Coss) | 110pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 925pF | |
| Gate Charge(Qg) | 16nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor's advanced PowerTrench? process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Merkmale
KI-Übersetzung
- Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
- Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
- Fast switching speed
- Low gate charge (11 nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM - 6 package: small footprint (72% smaller than standard SO - 8); low profile (1 mm thick)
- Termination lead - free and RoHS Compliant
Anwendungen
KI-Übersetzung
- Load switch
- Battery protection
- Power management
C890875 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FDC640P | TECH PUBLIC | SOT-23-6 | 2,485 | $ 0.1794 | ||
| FDC608PZ | onsemi | SSOT-6 | 105 | $ 0.5179 | ||
| FDC365P | onsemi | SSOT-6 | 0 | $ 2.6482 | ||
| FDC642P-F085 | onsemi | SSOT-6 | 0 | $ 0.5449 |