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Modelli EDAEasyEDA
VISHAY V20DM153CHM3/I
| Produttore | |
| Cod. Prod. | V20DM153CHM3/I |
| Cod. LCSC | C6907396 |
| Imballo | TO-263AC |
| Numero Cliente | |
| Attr. chiave | 1 Pair Common Cathode 10A 150V 980mV@10A TO-263AC Diode Arrays RoHS |
| Scheda Tecnica | VISHAY V20DM153CHM3/I |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | VISHAY | |
| Imballo | TO-263AC | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A | |
| Voltage - DC Reverse(Vr) | 150V | |
| Voltage - Forward(Vf@If) | 980mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@150V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | VISHAY | |
| Imballo | TO-263AC | |
| Diode Configuration | 1 Pair Common Cathode |
| Tipo | Descrizione | |
|---|---|---|
| Current - Rectified | 10A | |
| Voltage - DC Reverse(Vr) | 150V | |
| Voltage - Forward(Vf@If) | 980mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@150V |
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Descrizione
Traduzione AI
Dual high-voltage TMBS (Trench MOS Barrier Schottky) rectifier, ultra-low V<sub>F</sub> = 0.57 V at I<sub>F</sub> = 5.0 A, eSMP series.
Caratteristiche
Traduzione AI
- Trench MOS Schottky technology
- Ultra-low profile, typical height 1.7 mm
- Compatible with automated placement
- Low forward voltage drop, low power dissipation, RoHS compliant
- High efficiency, halogen-free
- MSL Level 1 per J-STD-020, lead-free, maximum peak temperature 260°C
- AEC-Q101 qualified available: automotive order code is base part number HM3
Applicazioni
Traduzione AI
For use in high-frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diodes, and reverse battery protection in commercial, industrial, and automotive applications.
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.5698 | $ 1.57 |
| 200+ | $ 0.627 | $ 125.40 |
| 500+ | $ 0.6064 | $ 303.20 |
| 1,000+ | $ 0.5953 | $ 595.30 |
Package Standard2000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | VISHAY | |
| Imballo | TO-263AC | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A | |
| Voltage - DC Reverse(Vr) | 150V | |
| Voltage - Forward(Vf@If) | 980mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@150V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | VISHAY | |
| Imballo | TO-263AC | |
| Diode Configuration | 1 Pair Common Cathode |
| Tipo | Descrizione | |
|---|---|---|
| Current - Rectified | 10A | |
| Voltage - DC Reverse(Vr) | 150V | |
| Voltage - Forward(Vf@If) | 980mV@10A | |
| Reverse Leakage Current (Ir) | 100uA@150V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Dual high-voltage TMBS (Trench MOS Barrier Schottky) rectifier, ultra-low V<sub>F</sub> = 0.57 V at I<sub>F</sub> = 5.0 A, eSMP series.
Caratteristiche
Traduzione AI
- Trench MOS Schottky technology
- Ultra-low profile, typical height 1.7 mm
- Compatible with automated placement
- Low forward voltage drop, low power dissipation, RoHS compliant
- High efficiency, halogen-free
- MSL Level 1 per J-STD-020, lead-free, maximum peak temperature 260°C
- AEC-Q101 qualified available: automotive order code is base part number HM3
Applicazioni
Traduzione AI
For use in high-frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diodes, and reverse battery protection in commercial, industrial, and automotive applications.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MBRB20200CT | R+O | TO-263 | 2,125 | $ 0.3729 | ||
| MBRB20200CT | baocheng | TO-263 | 2,117 | $0.4068 $0.4282 | ||
| SBDB20200CT | High Diode | TO-263-2L | 780 | $ 0.2585 | ||
| MBR20200CS | XUMAO | TO-263 | 580 | $0.3321 $0.3907 | ||
| MBRB30150CT | R+O | TO-263-2L | 769 | $ 0.5378 | ||
| SBDB30150CT | High Diode | TO-263-2L | 720 | $ 0.2502 | ||
| MBRB30200CT | baocheng | TO-263 | 3,132 | $0.3495 $0.4659 | ||
| MBRB30200CT | R+O | TO-263 | 710 | $ 0.4907 | ||
| MBR30200CS | XUMAO | TO-263 | 432 | $0.3888 $0.4574 | ||
| MBRB30150CT | baocheng | TO-263 | 1,114 | $0.3384 $0.4512 | ||
| MBRB20150CT | baocheng | TO-263 | 820 | $0.2750 $0.3666 | ||
| MBR20150CS | XUMAO | TO-263 | 755 | $0.3294 $0.3875 | ||
| SBDB20150CT | High Diode | TO-263-2L | 95 | $ 0.2322 | ||
| MBRS10150CTH | Taiwan Semiconductor | TO-263AB(D2PAK) | 0 | $ 0.8022 | ||
| V20DM153C-M3/I | VISHAY | TO-263AC | 0 | $ 1.1079 | ||
| SRS10150H | Taiwan Semiconductor | TO-263AB(D2PAK) | 0 | $ 0.8407 | ||
| V30DM153C-M3/I | VISHAY | TO-263AC | 0 | $ 1.4866 | ||
| V30DM153CHM3/I | VISHAY | TO-263AC | 0 | $ 2.2698 | ||
| SBDB30200CT | High Diode | TO-263-2L | 0 | $ 0.3078 | ||
| MBRS25150CTH | Taiwan Semiconductor | TO-263AB(D2PAK) | 0 | $ 1.7387 |