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EDA-ModelleEasyEDA
Infineon S25HL512TDPNHB013
| Hersteller | |
| Herst.-Teilenr. | S25HL512TDPNHB013 |
| LCSC-Nr. | C6472049 |
| Verp. | WSON-8(6x8) |
| Kundennummer | |
| Hauptmerkm. | 512Mbit 2.7V~3.6V 166MHz SPI WSON-8(6x8) Memory RoHS |
| Datenblatt | Infineon S25HL512TDPNHB013 |
| Alternativteile | 11 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | WSON-8(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | WSON-8(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
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Merkmale
KI-Übersetzung
- Infineon 45nm MIRRORBIT technology, storing two data bits per memory array cell
- Sector architecture options: uniform, hybrid configuration 1, hybrid configuration 2
- Page program buffer: 256 or 512 bytes
- OTP security silicon array: 1024 bytes (32 × 32 bytes)
- Quad SPI: supports 1S-1S-4S, 1S-4S-4S, 1S-4D-4D, 4S-4S-4S, 4S-4D-4D protocols; SDR option up to 83 MBps (166 MHz clock speed); DDR option up to 102 MBps (102 MHz clock speed)
- Dual SPI: supports 1S-2S-2S protocol; SDR option up to 41.5 MBps (166 MHz clock speed)
- SPI: supports 1S-1S-1S protocol; SDR option up to 21 MBps (166 MHz clock speed)
- Functional safety features: functional safety NOR flash compliant with ISO 26262 ASIL B and ASIL D ready; Infineon Endurance Flex architecture provides high endurance and long retention partitions; data integrity CRC detects errors in memory array; SafeBoot reports device initialization failures, detects configuration corruption, and provides recovery options; built-in ECC corrects single-bit errors and detects double-bit errors in memory array data (SECDED); sector erase status indicator for power loss during erase
- Protection features: legacy block protection for memory array and device configuration; advanced sector protection based on individual memory array sectors
- AutoBoot enables immediate memory array access after power-up
- Hardware reset via JEDEC serial flash reset signaling protocol / dedicated RESET# pin / DQ3_RESET# pin
- Serial Flash Discoverable Parameters (SFDP) describe device functions and features
- Device ID, manufacturer ID, and identification
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Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 23.8556 | $ 23.86 |
| 200+ | $ 9.5189 | $ 1903.78 |
| 500+ | $ 9.2007 | $ 4600.35 |
| 1,000+ | $ 9.0431 | $ 9043.10 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | WSON-8(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | WSON-8(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Infineon 45nm MIRRORBIT technology, storing two data bits per memory array cell
- Sector architecture options: uniform, hybrid configuration 1, hybrid configuration 2
- Page program buffer: 256 or 512 bytes
- OTP security silicon array: 1024 bytes (32 × 32 bytes)
- Quad SPI: supports 1S-1S-4S, 1S-4S-4S, 1S-4D-4D, 4S-4S-4S, 4S-4D-4D protocols; SDR option up to 83 MBps (166 MHz clock speed); DDR option up to 102 MBps (102 MHz clock speed)
- Dual SPI: supports 1S-2S-2S protocol; SDR option up to 41.5 MBps (166 MHz clock speed)
- SPI: supports 1S-1S-1S protocol; SDR option up to 21 MBps (166 MHz clock speed)
- Functional safety features: functional safety NOR flash compliant with ISO 26262 ASIL B and ASIL D ready; Infineon Endurance Flex architecture provides high endurance and long retention partitions; data integrity CRC detects errors in memory array; SafeBoot reports device initialization failures, detects configuration corruption, and provides recovery options; built-in ECC corrects single-bit errors and detects double-bit errors in memory array data (SECDED); sector erase status indicator for power loss during erase
- Protection features: legacy block protection for memory array and device configuration; advanced sector protection based on individual memory array sectors
- AutoBoot enables immediate memory array access after power-up
- Hardware reset via JEDEC serial flash reset signaling protocol / dedicated RESET# pin / DQ3_RESET# pin
- Serial Flash Discoverable Parameters (SFDP) describe device functions and features
- Device ID, manufacturer ID, and identification
C6472049 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| S25HL512TDPNHV010 | Infineon | WSON-8(6x8) | 0 | $ 16.8395 | ||
| S25HL512TDPNHV013 | Infineon | WSON-8(6x8) | 0 | $ 19.8107 | ||
| S25HL512TFANHV013 | Infineon | WSON-8(6x8) | 0 | $ 20.6656 | ||
| S25HL512TFANHB013 | Infineon | WSON-8(6x8) | 0 | $ 25.3194 | ||
| S25HL512TFANHI013 | Infineon | WSON-8(6x8) | 0 | $ 19.1564 | ||
| S25HL512TFANHM010 | Infineon | WSON-8(6x8) | 0 | $ 21.0898 | ||
| S25HL512TDPNHM013 | Infineon | WSON-8(6x8) | 0 | $ 28.8598 | ||
| S25HL512TDPNHI013 | Infineon | WSON-8(6x8) | 0 | $ 19.2408 | ||
| S25HL512TDPNHM010 | Infineon | WSON-8(6x8) | 0 | $ 20.1252 | ||
| S25HL512TFANHM013 | Infineon | WSON-8(6x8) | 0 | $ 28.231 | ||
| S25HL512TFANHB010 | Infineon | WSON-8(6x8) | 0 | $ 19.8304 |