MACOM MAPRST0912-50
| Hersteller | |
| Herst.-Teilenr. | MAPRST0912-50 |
| LCSC-Nr. | C17544707 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 65V 220kW 5.3A NPN Bipolar RF Transistors RoHS |
| Datenblatt | MACOM MAPRST0912-50 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 220kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 5.3A | |
| type | NPN | |
| Number | 1 NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 220kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 5.3A | |
| type | NPN | |
| Number | 1 NPN |
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Beschreibung
KI-Übersetzung
MAPRST0912 - 50 is an RF power transistor. These high-power transistors are ideal for communications, as well as industrial, scientific, and medical applications.
Merkmale
KI-Übersetzung
- NPN silicon microwave power transistor, common-base configuration
- Broadband Class C operation, high-efficiency interdigitated geometry, diffused emitter ballast resistors
- Gold metallization system
- Internal input and output impedance matching, hermetic metal/ceramic package, RoHS compliant
Anwendungen
KI-Übersetzung
Electronic, Communications, Industrial, Scientific, and Medical
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 448.474 | $ 448.47 |
| 200+ | $ 178.944 | $ 35788.80 |
| 500+ | $ 172.9643 | $ 86482.15 |
| 1,000+ | $ 170.0106 | $ 170010.60 |
Standardgehäuse20/Full Tray | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V | |
| Pd - Power Dissipation | 220kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 5.3A | |
| type | NPN | |
| Number | 1 NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Hersteller | MACOM | |
| Verp. | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 65V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 220kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 5.3A | |
| type | NPN | |
| Number | 1 NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
MAPRST0912 - 50 is an RF power transistor. These high-power transistors are ideal for communications, as well as industrial, scientific, and medical applications.
Merkmale
KI-Übersetzung
- NPN silicon microwave power transistor, common-base configuration
- Broadband Class C operation, high-efficiency interdigitated geometry, diffused emitter ballast resistors
- Gold metallization system
- Internal input and output impedance matching, hermetic metal/ceramic package, RoHS compliant
Anwendungen
KI-Übersetzung
Electronic, Communications, Industrial, Scientific, and Medical
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

