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Modelli EDAEasyEDA
onsemi NTTFS030N06CTAG
| Produttore | |
| Cod. Prod. | NTTFS030N06CTAG |
| Cod. LCSC | C900340 |
| Imballo | WDFN-8-EP(3.3x3.3) |
| Numero Cliente | |
| Attr. chiave | 23W 60V 19A 4V 24.7mΩ@10V 1 N-channel N-Channel WDFN-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | onsemi NTTFS030N06CTAG |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 173pF | |
| Pd - Power Dissipation | 23W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 19A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF | |
| RDS(on) | 24.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 255pF | |
| Gate Charge(Qg) | 4.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 173pF | |
| Pd - Power Dissipation | 23W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 19A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF | |
| RDS(on) | 24.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 255pF | |
| Gate Charge(Qg) | 4.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Small package (3.3 x 3.3 mm) for compact designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applicazioni
Traduzione AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling equipment
- Battery management systems/energy storage, home automation
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.4419 | $ 1.44 |
| 10+ | $ 1.2443 | $ 12.44 |
| 30+ | $ 1.1357 | $ 34.07 |
| 100+ | $ 1.0126 | $ 101.26 |
| 500+ | $ 0.9041 | $ 452.05 |
| 1,500+ | $ 0.8781 | $ 1317.15 |
Package Standard1500/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 173pF | |
| Pd - Power Dissipation | 23W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 19A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF | |
| RDS(on) | 24.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 255pF | |
| Gate Charge(Qg) | 4.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8-EP(3.3x3.3) | |
| Output Capacitance(Coss) | 173pF | |
| Pd - Power Dissipation | 23W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 19A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF | |
| RDS(on) | 24.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 255pF | |
| Gate Charge(Qg) | 4.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Small package (3.3 x 3.3 mm) for compact designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applicazioni
Traduzione AI
- Power tools, battery-powered vacuum cleaners
- Drones, material handling equipment
- Battery management systems/energy storage, home automation
C900340 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| TPM6030ND8 | TECH PUBLIC | PDFN-8(3x3) | 280 | $ 0.341 | ||
| BSZ240N12NS3 G | Infineon | TSDSON-8(3.3x3.3) | 50 | $ 4.4494 | ||
| NTTFS020N06CTAG | onsemi | WDFN-8-EP(3.3x3.3) | 3 | $ 1.2491 | ||
| NVTFS5C680NLTAG | onsemi | WDFN-8(3.3x3.3) | 66 | $ 1.3173 | ||
| NVTFS5C680NLWFTAG | onsemi | WDFN-8(3.3x3.3) | 10 | $ 1.3123 | ||
| NVTFS030N06CTAG | onsemi | WDFN-8-EP(3.3x3.3) | 0 | $ 0.8416 | ||
| NTTFS030N10GTAG | onsemi | WDFN-8(3.3x3.3) | 0 | $ 0.9583 | ||
| RH6P040BHTB1 | ROHM | HSMT-8(3x3.2) | 0 | $ 1.8537 | ||
| NTTFS6H880NLTAG | onsemi | WDFN-8-EP(3.3x3.3) | 0 | $ 0.4859 | ||
| NTTFS024N06CTAG | onsemi | WDFN-8-EP(3.3x3.3) | 0 | $ 0.981 |