- Pinout
- Footprint
onsemi FCPF13N60NT
| Produttore | |
| Cod. Prod. | FCPF13N60NT |
| Cod. LCSC | C899123 |
| Imballo | TO-220F |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 600V 13A TO-220F |
| Scheda Tecnica | onsemi FCPF13N60NT |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 116W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 220mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.765nF | |
| Gate Charge(Qg) | 30.4nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 116W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 220mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.765nF | |
| Gate Charge(Qg) | 30.4nC@10V |
Descrizione
The SupreMOS® MOSFET is next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Caratteristiche
- RDS(on)=220 mΩ (Typ.), ID=6.5 A
- Ultra Low Gate Charge (Typ. Qg=30.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.)=145 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applicazioni
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.8085 | $ 0.81 |
| 10+ | $ 0.7235 | $ 7.24 |
| 50+ | $ 0.6778 | $ 33.89 |
| 100+ | $ 0.6255 | $ 62.55 |
| 500+ | $ 0.6027 | $ 301.35 |
| 1,000+ | $ 0.5929 | $ 592.90 |
Package Standard50/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 116W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 220mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.765nF | |
| Gate Charge(Qg) | 30.4nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 116W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 220mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.765nF | |
| Gate Charge(Qg) | 30.4nC@10V |
Descrizione
The SupreMOS® MOSFET is next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Caratteristiche
- RDS(on)=220 mΩ (Typ.), ID=6.5 A
- Ultra Low Gate Charge (Typ. Qg=30.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.)=145 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applicazioni
- LCD/LED/PDP TV
- Lighting
- Solar Inverter
- AC-DC Power Supply
C899123 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MJF20N65 | MIRACLE POWER | TO-220F | 55 | $0.8439 $0.8883 | ||
| MJF20N70 | MIRACLE POWER | TO-220F | 53 | $1.1648 $1.2261 | ||
| ASA60R210E | ANHI | TO-220F | 281 | $ 0.8238 | ||
| NTPF190N65S3H | onsemi | TO-220F | 3 | $ 4.6806 | ||
| ASA70R240E | ANHI | TO-220F | 147 | $ 1.1915 | ||
| TK14A65W5-VB | VBsemi Elec | TO-220F | 5 | $1.6816 $1.9783 | ||
| VBMB17R18S | VBsemi Elec | TO-220F | 5 | $ 1.9783 | ||
| WCR250N65TF-3/T | WILLSEMI | TO-220F | 0 | $ 2.82 | ||
| FCP16N60N-F102 | onsemi | TO-220F | 0 | $ 2.207 | ||
| VBMB165R15S | VBsemi Elec | TO-220F | 0 | $ 3.0032 |