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EDA-ModelleEasyEDA
onsemi NTB004N10G
| Hersteller | |
| Herst.-Teilenr. | NTB004N10G |
| LCSC-Nr. | C898797 |
| Verp. | D2PAK |
| Kundennummer | |
| Hauptmerkm. | 100V 201A 2.8V 340W 3.4mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NTB004N10G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 201A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 340W | |
| Reverse Transfer Capacitance (Crss@Vds) | 147pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.9nF | |
| Gate Charge(Qg) | 175nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 201A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 340W | |
| Reverse Transfer Capacitance (Crss@Vds) | 147pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.9nF | |
| Gate Charge(Qg) | 175nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low R<sub>DS(on)</sub>
- High current carrying capability
- Wide Safe Operating Area (SOA)
- Lead-free, RoHS compliant
Anwendungen
KI-Übersetzung
- Hot swap in 48 V systems
Vorrätig: 800
800 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 5.7883 | $ 5.79 |
| 10+ | $ 4.9197 | $ 49.20 |
| 30+ | $ 4.4035 | $ 132.11 |
| 100+ | $ 3.8807 | $ 388.07 |
| 500+ | $ 3.6415 | $ 1820.75 |
| 800+ | $ 3.5317 | $ 2825.36 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 201A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 340W | |
| Reverse Transfer Capacitance (Crss@Vds) | 147pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.9nF | |
| Gate Charge(Qg) | 175nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 201A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 340W | |
| Reverse Transfer Capacitance (Crss@Vds) | 147pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.9nF | |
| Gate Charge(Qg) | 175nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low R<sub>DS(on)</sub>
- High current carrying capability
- Wide Safe Operating Area (SOA)
- Lead-free, RoHS compliant
Anwendungen
KI-Übersetzung
- Hot swap in 48 V systems
C898797 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRF100S201-HXY | HXY MOSFET | TO-263 | 253 | $1.1909 $1.3232 | ||
| IRFS4310ZTRLPBF-HXY | HXY MOSFET | TO-263 | 145 | $1.3421 $1.4127 | ||
| AOB66914L | HXY MOSFET | TO-263 | 25 | $2.9950 $3.1526 | ||
| CSD19535KTT-HXY | HXY MOSFET | TO-263 | 13 | $1.7376 $1.829 | ||
| AOB66935L | HXY MOSFET | TO-263 | 794 | $1.0915 $1.1489 | ||
| NDBA180N10BT4H-HXY | HXY MOSFET | TO-263 | 293 | $1.0323 $1.0866 | ||
| IPB027N10N3GATMA1-HXY | HXY MOSFET | TO-263 | 25 | $3.2833 $3.4561 | ||
| IPB026N10NF2SATMA1-HXY | HXY MOSFET | TO-263 | 24 | $3.0251 $3.1843 | ||
| IPB027N10N5ATMA1-HXY | HXY MOSFET | TO-263 | 13 | $3.2288 $3.3987 | ||
| SUM70030E-GE3-HXY | HXY MOSFET | TO-263 | 12 | $3.1594 $3.3256 |