Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NSVMUN531335DW1T3G
| Hersteller | |
| Herst.-Teilenr. | NSVMUN531335DW1T3G |
| LCSC-Nr. | C896848 |
| Verp. | SOT-363 |
| Kundennummer | |
| Hauptmerkm. | 80 250mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datenblatt | onsemi NSVMUN531335DW1T3G |
| RoHS-Konformität | 4 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Reduced board space
- Reduced component count
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 compliant with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.1275 | $ 0.13 |
| 200+ | $ 0.0494 | $ 9.88 |
| 500+ | $ 0.0476 | $ 23.80 |
| 1,000+ | $ 0.0468 | $ 46.80 |
Standardgehäuse10000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Reduced board space
- Reduced component count
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 compliant with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C896848 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |