Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi FQU5N50CTU-WS
| Produttore | |
| Cod. Prod. | FQU5N50CTU-WS |
| Cod. LCSC | C896104 |
| Imballo | TO-251-3 |
| Numero Cliente | |
| Attr. chiave | 500V 4A 4V 48W 1.14Ω@10V 1 N-channel N-Channel TO-251-3 Single FETs, MOSFETs |
| Scheda Tecnica | onsemi FQU5N50CTU-WS |
| Parti alternative | 9 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-251-3 | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 80pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 48W | |
| RDS(on) | 1.14Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-251-3 | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 80pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 48W | |
| RDS(on) | 1.14Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±30V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caratteristiche
Traduzione AI
- 4.0 A, 500 V, R DS(on) = 1.4 Ω at VGS = 10 V
- Low gate charge (typical 18 nC)
- Low Crss (typical 15 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applicazioni
Traduzione AI
- Switching Mode Power Supply
- Active Power Factor Correction (PFC)
- Electronic Lamp Ballast
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.3146 | $ 1.31 |
| 10+ | $ 1.0929 | $ 10.93 |
| 30+ | $ 0.9713 | $ 29.14 |
| 100+ | $ 0.8343 | $ 83.43 |
| 500+ | $ 0.7728 | $ 386.40 |
| 1,000+ | $ 0.7451 | $ 745.10 |
Package Standard5040/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-251-3 | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 80pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 48W | |
| RDS(on) | 1.14Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-251-3 | |
| Drain to Source Voltage | 500V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 80pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 48W | |
| RDS(on) | 1.14Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 480pF | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This N-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Caratteristiche
Traduzione AI
- 4.0 A, 500 V, R DS(on) = 1.4 Ω at VGS = 10 V
- Low gate charge (typical 18 nC)
- Low Crss (typical 15 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applicazioni
Traduzione AI
- Switching Mode Power Supply
- Active Power Factor Correction (PFC)
- Electronic Lamp Ballast
C896104 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SPU04N60C3 | Infineon | TO-251-3 | 10 | $ 1.4687 | ||
| MOT5N50C | MOT | TO-251 | 1,135 | $0.2299 $0.2554 | ||
| MOT4N65C | MOT | TO-251 | 385 | $ 0.2154 | ||
| 4N65L-Q-TMS-T | UTC | TO-251S | 44 | $ 0.3621 | ||
| YFW8N65AMJ | YFW | TO-251S | 30 | $0.2970 $0.3126 | ||
| LSH70R1KGT | LONTEN | TO-251 | 138 | $ 0.4527 | ||
| XCH4N80N | XCH | TO-251 | 15 | $ 0.1634 | ||
| 4N65KG-TM3-T | UTC | TO-251 | 1,183 | $ 0.2584 | ||
| JCS4N90VH-251 | Jilin Sino-Microelectronics | TO-251 | 0 | $ 0.5178 |