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EDA-ModelleEasyEDA
onsemi NVTFS5124PLTWG
| Hersteller | |
| Herst.-Teilenr. | NVTFS5124PLTWG |
| LCSC-Nr. | C896035 |
| Verp. | WDFN-8(3x3) |
| Kundennummer | |
| Hauptmerkm. | 18W 60V 6A 2.5V 200mΩ@10V 1 P-Channel P-Channel WDFN-8(3x3) Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NVTFS5124PLTWG |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | WDFN-8(3x3) | |
| Output Capacitance(Coss) | 27pF | |
| Pd - Power Dissipation | 18W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 3.5nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | WDFN-8(3x3) | |
| Output Capacitance(Coss) | 27pF | |
| Pd - Power Dissipation | 18W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 3.5nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (3.3 x 3.3 mm) for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized driving losses
- NVTFS5124PLWF - solderable flank variant
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5719 | $ 0.57 |
| 10+ | $ 0.5654 | $ 5.65 |
| 30+ | $ 0.5605 | $ 16.82 |
| 100+ | $ 0.5557 | $ 55.57 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | WDFN-8(3x3) | |
| Output Capacitance(Coss) | 27pF | |
| Pd - Power Dissipation | 18W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 3.5nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | WDFN-8(3x3) | |
| Output Capacitance(Coss) | 27pF | |
| Pd - Power Dissipation | 18W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 3.5nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (3.3 x 3.3 mm) for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized driving losses
- NVTFS5124PLWF - solderable flank variant
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
C896035 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NVTFS5124PLTAG | onsemi | WDFN-8(3x3) | 24 | $ 0.5043 | ||
| HNVTFS5124PLTWG | HXY MOSFET | DFN-8L(3x3) | 285 | $0.2598 $0.2952 | ||
| SQ7415CENW-T1_GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 81 | $0.5475 $0.5763 | ||
| HSBB6113 | HUASHUO | PRPAK3x3-8L | 17,770 | $ 0.2953 | ||
| TW15P06CC | TWGMC | PDFN-8(3x3) | 4,020 | $ 0.1893 | ||
| HSBB0115 | HUASHUO | PRPAK3x3-8L | 1,205 | $ 0.4181 | ||
| NVTFS5116PL-HXY | HXY MOSFET | DFN-8L(3x3) | 4,725 | $0.2460 $0.2589 | ||
| HSQ7415AEN | HXY MOSFET | DFN-8L(3x3) | 244 | $0.6362 $0.6696 | ||
| SI7309DN-T1-E3-HXY | HXY MOSFET | DFN3x3-8L | 227 | $0.6104 $0.6425 | ||
| SI7115DN-T1-GE3(TOKMAS) | Tokmas | DFN-8(3x3) | 0 | $ 0.9329 |