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실제 제품과 다를 수 있음
EDA 모델EasyEDA
onsemi SMUN5313DW1T1G
| 제조업체 | |
| 제조사 품번 | SMUN5313DW1T1G |
| LCSC 번호 | C894409 |
| 포장 | SOT-363 |
| 고객 번호 | |
| 주요 제원 | TRANS PREBIAS 50V SOT-363 |
| 데이터시트 | onsemi SMUN5313DW1T1G |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | onsemi | |
| 포장 | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | onsemi | |
| 포장 | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV |
| 타입 | 설명 | |
|---|---|---|
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
주요 특징
AI 번역
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant
재고 있음: 1,090
1,090 재고 있음, 당일 발송
최소값: 5배수: 5판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 5+ | $ 0.1189 | $ 0.59 |
| 50+ | $ 0.0953 | $ 4.77 |
| 150+ | $ 0.0835 | $ 12.53 |
| 500+ | $ 0.0746 | $ 37.30 |
| 3,000+ | $ 0.0675 | $ 202.50 |
| 6,000+ | $ 0.064 | $ 384.00 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | onsemi | |
| 포장 | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | onsemi | |
| 포장 | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV |
| 타입 | 설명 | |
|---|---|---|
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
주요 특징
AI 번역
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant
C894409 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| MUN5313DW1T1G | onsemi | SOT-363 | 730 | $ 0.0696 | ||
| MUN5311DW1T1G | onsemi | SOT-363 | 13,190 | $ 0.0551 | ||
| NSVMUN5312DW1T2G | onsemi | SOT-363 | 5 | $ 0.2541 | ||
| S-LMUN5314DW1T1G | LRC | SOT-363 | 27,400 | $ 0.0474 | ||
| MUN5331DW1T1G | onsemi | SOT-363 | 10 | $ 0.2406 | ||
| DCX144EUQ-7-F | DIODES | SOT-363-3 | 125 | $0.0696 $0.1038 | ||
| MUN5312DW1T1G | onsemi | SOT-363 | 0 | $ 0.0974 | ||
| SMUN5312DW1T1G | onsemi | SOT-363 | 0 | $ 0.426 | ||
| MUN5311DW1T2G | onsemi | SOT-363 | 0 | $ 0.0618 | ||
| SMUN5311DW1T2G | onsemi | SOT-363 | 0 | $ 0.2507 |