Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi MUN5116T1G
| Producent | |
| Nr części prod. | MUN5116T1G |
| Nr LCSC | C891809 |
| Opak. | SC-70 |
| Numer Klienta | |
| Klucz. cechy | 50V 160 100mA 310mW PNP 1 PNP Pre-Biased SC-70 Single, Pre-Biased Bipolar Transistors RoHS |
| Karta Katalogowa | onsemi MUN5116T1G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Funkcje
Tłumaczenie AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.0283 | $ 0.03 |
| 200+ | $ 0.011 | $ 2.20 |
| 500+ | $ 0.0106 | $ 5.30 |
| 1,000+ | $ 0.0104 | $ 10.40 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Funkcje
Tłumaczenie AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C891809 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| PDTA143ZU,115 | Nexperia | SOT-323-3 | 14,850 | $ 0.0482 | ||
| ADTA143ZUAQ-7 | DIODES | SOT-323 | 300 | $ 0.0767 | ||
| DTA143ZUA | CBI | SOT-323 | 2,800 | $ 0.0205 | ||
| ADTA143ZUAQ-13 | DIODES | SOT-323 | 60 | $ 0.0586 | ||
| SMUN5114T3G | onsemi | SC-70 | 10 | $ 0.2892 | ||
| MUN5133T1G | onsemi | SC-70-3 | 0 | $ 0.0198 | ||
| MUN5138T1G | onsemi | SOT-323 | 0 | $ 0.0283 | ||
| MUN5114T1G | onsemi | SC-70-3 | 0 | $ 0.0373 | ||
| DTA143ZUBTL | ROHM | UMT3F | 0 | $ 0.0435 | ||
| DTA143ZU3HZGT106 | ROHM | SC-70(SOT-323) | 0 | $ 0.0416 |