Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi DTC115TET1G
| Producent | |
| Nr części prod. | DTC115TET1G |
| Nr LCSC | C890585 |
| Opak. | SC-75-3 |
| Numer Klienta | |
| Klucz. cechy | 50V 350 100mA 200mW NPN 1 NPN (Pre-Biased) SC-75-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Karta Katalogowa | onsemi DTC115TET1G |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 350 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 350 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Funkcje
Tłumaczenie AI
- Simplified circuit design
- Reduced board space
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified with PPAP capability
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.0288 | $ 0.03 |
| 200+ | $ 0.0112 | $ 2.24 |
| 500+ | $ 0.0108 | $ 5.40 |
| 1,000+ | $ 0.0106 | $ 10.60 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 350 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 350 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Funkcje
Tłumaczenie AI
- Simplified circuit design
- Reduced board space
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified with PPAP capability
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C890585 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| DTC114YET1G | onsemi | SC-75(SOT-416) | 450 | $ 0.0535 | ||
| SDTC114YET1G | onsemi | SC-75(SOT-416) | 145 | $ 0.2907 | ||
| DTC143ZET1G | onsemi | SC-75(SOT-416) | 9,620 | $ 0.1041 | ||
| DTC114TET1G | onsemi | SOT-416-3 | 140 | $ 0.0621 | ||
| MMDTC143ZE | ST(Semtech) | SOT-523 | 1,150 | $ 0.0184 | ||
| NSVDTC143ZET1G | onsemi | SC-75 | 52 | $ 0.4933 | ||
| DTC143TET1G | onsemi | SC-75-3 | 0 | $ 0.0444 | ||
| FJY3014R | onsemi | SOT-523F | 0 | $ 0.0221 | ||
| BCR135TE6327 | Infineon | SC-75 | 0 | $ 0.0221 | ||
| FJY3006R | onsemi | SOT-523F | 0 | $ 0.0221 |