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Modelli EDAEasyEDA
onsemi DTA143TET1G
| Produttore | |
| Cod. Prod. | DTA143TET1G |
| Cod. LCSC | C890580 |
| Imballo | SC-75(SOT-416) |
| Numero Cliente | |
| Attr. chiave | TRANS PREBIAS 50V SC-75(SOT-416) |
| Scheda Tecnica | onsemi DTA143TET1G |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-75(SOT-416) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-75(SOT-416) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
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Descrizione
Traduzione AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Caratteristiche
Traduzione AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Esaurito
Avvisami
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 5+ | $ 0.1006 | $ 0.50 |
| 50+ | $ 0.0834 | $ 4.17 |
| 150+ | $ 0.0748 | $ 11.22 |
| 500+ | $ 0.0684 | $ 34.20 |
| 3,000+ | $ 0.0633 | $ 189.90 |
| 6,000+ | $ 0.0607 | $ 364.20 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-75(SOT-416) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-75(SOT-416) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Caratteristiche
Traduzione AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C890580 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| DTA143ZET1G | onsemi | SC-75 | 800 | $ 0.0613 | ||
| DTA143ZE | YANGJIE | SOT-523(SC-75) | 2,250 | $ 0.0393 | ||
| DTA123JET1G | onsemi | SC-75(SOT-416) | 10 | $ 0.2214 | ||
| DTA143ZETL | ROHM | SOT-416 | 2,260 | $ 0.0256 | ||
| DDTA143ZE-7-F | DIODES | SOT-523 | 120 | $ 0.0633 | ||
| DTA143ZE | MSKSEMI | SOT-523 | 1,320 | $0.0218 $0.0256 | ||
| DTA143ZE | Slkor | SOT-523 | 1,100 | $ 0.0198 | ||
| DTA123TET1G | onsemi | SC-75-3 | 0 | $ 0.0239 | ||
| DTA114YET1G | onsemi | SC-75(SOT-416) | 0 | $ 0.0765 | ||
| DTA143ZE | JSCJ | SOT-523 | 0 | $ 0.0331 |