- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
HUASHUO HSCB2307
| Produttore | HUASHUOAsian Brands |
| Cod. Prod. | HSCB2307 |
| Cod. LCSC | C845602 |
| Imballo | DFN-6L(2x2) |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 20V 8A DFN-6L(2x2) |
| Scheda Tecnica | HUASHUO HSCB2307 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 489pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 489pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HSCB2307 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSCB2307 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
- DFN2×2 - 6L pin configuration
Disponibile: 2,725
2,725 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.1065 | $ 0.53 |
| 50+ | $ 0.0846 | $ 4.23 |
| 150+ | $ 0.0736 | $ 11.04 |
| 500+ | $ 0.0654 | $ 32.70 |
| 2,500+ | $ 0.0518 | $ 129.50 |
| 4,000+ | $ 0.0485 | $ 194.00 |
Package Standard4000/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 489pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 489pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF | |
| RDS(on) | 18mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HSCB2307 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSCB2307 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
- DFN2×2 - 6L pin configuration
C845602 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |