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VISHAY SI7272DP-T1-GE3
| Producent | |
| Nr części prod. | SI7272DP-T1-GE3 |
| Nr LCSC | C7465340 |
| Opak. | PowerPAKSO-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH ARR 30V 25A PowerPAKSO-8 |
| Karta Katalogowa | VISHAY SI7272DP-T1-GE3 |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAKSO-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 14W | |
| RDS(on) | 9.3mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 8.2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAKSO-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 14W | |
| RDS(on) | 9.3mΩ@10V |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 8.2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Opis
The PowerPAK package was developed around the SO - 8 package. The PowerPAK SO - 8 utilizes the same footprint and the same pin - outs as the standard SO - 8, allowing it to be substituted directly for a standard SO - 8 package. Being a leadless package, it utilizes the entire SO - 8 footprint, freeing space and allowing it to hold a larger die than a standard SO - 8. The bottom of the die attach pad is exposed for a direct, low resistance thermal path to the substrate. The package height is lower than the standard SO - 8, making it an excellent choice for applications with space constraints.
Funkcje
- TrenchFET Power MOSFET
- Optimized for PWM
- RoHS Compliant
- Halogen-Free
Zastosowania
- System Power DC/DC
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.6331 | $ 1.63 |
| 10+ | $ 1.3728 | $ 13.73 |
| 30+ | $ 1.2086 | $ 36.26 |
| 100+ | $ 1.0427 | $ 104.27 |
| 500+ | $ 0.9662 | $ 483.10 |
| 1,000+ | $ 0.9337 | $ 933.70 |
Standardowa Obudowa3000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAKSO-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 14W | |
| RDS(on) | 9.3mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 8.2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAKSO-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 14W | |
| RDS(on) | 9.3mΩ@10V |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 8.2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Opis
The PowerPAK package was developed around the SO - 8 package. The PowerPAK SO - 8 utilizes the same footprint and the same pin - outs as the standard SO - 8, allowing it to be substituted directly for a standard SO - 8 package. Being a leadless package, it utilizes the entire SO - 8 footprint, freeing space and allowing it to hold a larger die than a standard SO - 8. The bottom of the die attach pad is exposed for a direct, low resistance thermal path to the substrate. The package height is lower than the standard SO - 8, making it an excellent choice for applications with space constraints.
Funkcje
- TrenchFET Power MOSFET
- Optimized for PWM
- RoHS Compliant
- Halogen-Free
Zastosowania
- System Power DC/DC
C7465340 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| SP30N06DNK | Siliup | PDFN-8L(5x6) | 5,000 | $0.1910 $0.2728 | ||
| AGM306MA | AGMSEMI | PDFN5x6-8 | 170 | $ 0.2288 | ||
| AOE6932 | AOS | DFN-8(5x6) | 8 | $ 1.9468 | ||
| GT090N06D52 | GOFORD | DFN5x6-8 | 78 | $ 0.7506 | ||
| WSD4078DN56 | Winsok Semicon | DFN-8(5x6) | 83 | $ 0.6758 | ||
| WSD46N10DN56 | Winsok Semicon | DFN-8-C-EP2(5x6) | 768 | $0.7377 $0.8196 | ||
| NTMFD6H846NLT1G | onsemi | DFN-8(4.9x5.9) | 7 | $ 1.8518 | ||
| DOM45DN03 | DOINGTER | DFN5x6AsymDual | 2,900 | $ 0.1866 | ||
| HSBA6224 | HUASHUO | PRPAK5x6-8L | 410 | $ 0.3006 | ||
| IPG20N06S4L-26(TOKMAS)) | Tokmas | DFN-8(5x6) | 0 | $0.2885 $0.3394 |