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VBsemi Elec IPB120N04S4-02-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | IPB120N04S4-02-VB |
| LCSC-Nr. | C7428982 |
| Verp. | TO-263(D2PAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 150A TO-263(D2PAK) |
| Datenblatt | VBsemi Elec IPB120N04S4-02-VB |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Anwendungen
KI-Übersetzung
- Synchronous Rectification - Power Supply
Vorrätig: 30
30 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.5372$ 1.3067 | $ 1.31 |
| 10+ | $ 1.2835$ 1.0910 | $ 10.91 |
| 50+ | $ 1.1437$ 0.9722 | $ 48.61 |
| 100+ | $ 0.9847$ 0.8370 | $ 83.70 |
| 500+ | $ 0.914$ 0.7769 | $ 388.45 |
| 1,000+ | $ 0.8819$ 0.7497 | $ 749.70 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Anwendungen
KI-Übersetzung
- Synchronous Rectification - Power Supply
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| BUK761R7-40E-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $ 1.4576 | ||
| BUK763R1-40B-VB | VBsemi Elec | TO-263 | 10 | $ 1.6988 | ||
| BUK963R2-40B-VB | VBsemi Elec | TO-263 | 10 | $1.6139 $1.6988 | ||
| PSMN2R8-40BS-VB | VBsemi Elec | TO-263 | 10 | $1.6139 $1.6988 | ||
| BUK763R6-40C,118-VB | VBsemi Elec | TO-263 | 5 | $1.8668 $1.965 | ||
| 270N4F3-VB TO263 | VBsemi Elec | TO-263(D2PAK) | 10 | $ 1.4576 | ||
| SUM110N04-03P-E3-VB | VBsemi Elec | TO-263(D2PAK) | 4 | $ 1.4576 | ||
| IRL1404ZSPBF-VB | VBsemi Elec | TO-263(D2PAK) | 13 | $1.8902 $1.9896 | ||
| VBL1402 | VBsemi Elec | TO-263 | 0 | $ 2.0824 | ||
| NP90N04PUF-VB | VBsemi Elec | TO-263(D2PAK) | 0 | $ 1.9776 |