Nexperia PZU33BA-QX
| Hersteller | |
| Herst.-Teilenr. | PZU33BA-QX |
| LCSC-Nr. | C7329017 |
| Verp. | SOD-323 |
| Kundennummer | |
| Hauptmerkm. | 31V~35V 33V SOD-323 Single Zener Diodes RoHS |
| Datenblatt | Nexperia PZU33BA-QX |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | Nexperia | |
| Verp. | SOD-323 | |
| Diode Configuration | - | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | 320mW | |
| Reverse Leakage Current (Ir) | 50uA@25V | |
| Impedance(Zzt) | 40Ω | |
| Zener Voltage(Range) | 31V~35V | |
| Zener Voltage(Nom) | 33V | |
| Impedance(Zzk) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | Nexperia | |
| Verp. | SOD-323 | |
| Diode Configuration | - | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 320mW | |
| Reverse Leakage Current (Ir) | 50uA@25V | |
| Impedance(Zzt) | 40Ω | |
| Zener Voltage(Range) | 31V~35V | |
| Zener Voltage(Nom) | 33V | |
| Impedance(Zzk) | - |
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Beschreibung
KI-Übersetzung
General- purpose Zener diodes in a SOD323 (SC- 76) very small Surface- Mounted Device (SMD) plastic package.
Merkmale
KI-Übersetzung
- Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W
- Total power dissipation: Ptot ≤ 320 mW
- Tolerance series:
- B: approximately ± 5%
- B1, B2, B3: approximately ± 2%
- Wide working voltage range: nominal 2.4 V to 36 V (E24 range)
- Low reverse current IR range
- Small plastic package suitable for surface-mounted design
- PZU5.1BA-Q - 10BA-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee
- PZU-types: ± 10 V: Intentional minor rise of leakage current for optimized fast switching and noise reduction [Ref. AN90031]
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Anwendungen
KI-Übersetzung
- General regulation functions
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0765 | $ 0.08 |
| 200+ | $ 0.0306 | $ 6.12 |
| 500+ | $ 0.0295 | $ 14.75 |
| 1,000+ | $ 0.029 | $ 29.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | Nexperia | |
| Verp. | SOD-323 | |
| Diode Configuration | - | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | 320mW | |
| Reverse Leakage Current (Ir) | 50uA@25V | |
| Impedance(Zzt) | 40Ω | |
| Zener Voltage(Range) | 31V~35V | |
| Zener Voltage(Nom) | 33V | |
| Impedance(Zzk) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | Nexperia | |
| Verp. | SOD-323 | |
| Diode Configuration | - | |
| Tolerance | ±5% | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 320mW | |
| Reverse Leakage Current (Ir) | 50uA@25V | |
| Impedance(Zzt) | 40Ω | |
| Zener Voltage(Range) | 31V~35V | |
| Zener Voltage(Nom) | 33V | |
| Impedance(Zzk) | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
General- purpose Zener diodes in a SOD323 (SC- 76) very small Surface- Mounted Device (SMD) plastic package.
Merkmale
KI-Übersetzung
- Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W
- Total power dissipation: Ptot ≤ 320 mW
- Tolerance series:
- B: approximately ± 5%
- B1, B2, B3: approximately ± 2%
- Wide working voltage range: nominal 2.4 V to 36 V (E24 range)
- Low reverse current IR range
- Small plastic package suitable for surface-mounted design
- PZU5.1BA-Q - 10BA-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee
- PZU-types: ± 10 V: Intentional minor rise of leakage current for optimized fast switching and noise reduction [Ref. AN90031]
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Anwendungen
KI-Übersetzung
- General regulation functions
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

