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VISHAY VB20150SG-E3/8W
| Producent | |
| Nr części prod. | VB20150SG-E3/8W |
| Nr LCSC | C7102835 |
| Opak. | TO-263AB(D2PAK) |
| Numer Klienta | |
| Klucz. cechy | 1 Independent 150V 1.6V@20A 20A TO-263AB(D2PAK) Single Diodes RoHS |
| Karta Katalogowa | VISHAY VB20150SG-E3/8W |
| Części alternatywne | 9 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Voltage - Forward(Vf@If) | 1.6V@20A | |
| Reverse Leakage Current (Ir) | 200uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 140A | |
| Current - Rectified | 20A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Voltage - Forward(Vf@If) | 1.6V@20A | |
| Reverse Leakage Current (Ir) | 200uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 140A | |
| Current - Rectified | 20A |
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Opis
Tłumaczenie AI
High-voltage trench MOS barrier Schottky rectifier, ultra-low forward voltage drop VF = 0.57V at IF = 5A, available in D²PAK (TO-263AB) and TO-262AA packages, part number VB20150SG
Funkcje
Tłumaczenie AI
- Trench MOS Schottky technology
- Low forward voltage drop, low power dissipation, high operating efficiency
- MSL Level 1 per J-STD-020, LF max peak 245°C (TO-263AB package)
- Solder bath temperature up to 275°C for 10 seconds per JESD 22-B106 (TO-220AB, ITO-220AB, and TO-262AA packages)
Zastosowania
Tłumaczenie AI
Suitable for high-frequency converters, switching power supplies, freewheeling diodes, rectifier diodes, DC/DC converters, and reverse battery protection
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.7655 | $ 1.77 |
| 200+ | $ 0.7047 | $ 140.94 |
| 500+ | $ 0.682 | $ 341.00 |
| 800+ | $ 0.6699 | $ 535.92 |
Standardowa Obudowa800/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Voltage - Forward(Vf@If) | 1.6V@20A | |
| Reverse Leakage Current (Ir) | 200uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 140A | |
| Current - Rectified | 20A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | TO-263AB(D2PAK) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Voltage - Forward(Vf@If) | 1.6V@20A | |
| Reverse Leakage Current (Ir) | 200uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 140A | |
| Current - Rectified | 20A |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
High-voltage trench MOS barrier Schottky rectifier, ultra-low forward voltage drop VF = 0.57V at IF = 5A, available in D²PAK (TO-263AB) and TO-262AA packages, part number VB20150SG
Funkcje
Tłumaczenie AI
- Trench MOS Schottky technology
- Low forward voltage drop, low power dissipation, high operating efficiency
- MSL Level 1 per J-STD-020, LF max peak 245°C (TO-263AB package)
- Solder bath temperature up to 275°C for 10 seconds per JESD 22-B106 (TO-220AB, ITO-220AB, and TO-262AA packages)
Zastosowania
Tłumaczenie AI
Suitable for high-frequency converters, switching power supplies, freewheeling diodes, rectifier diodes, DC/DC converters, and reverse battery protection
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| VB20150S-E3/8W | VISHAY | TO-263AB(D2PAK) | 32 | $ 1.8976 | ||
| YJD106506BQG2 | YANGJIE | TO-263 | 610 | $ 0.9661 | ||
| VB20150SG-E3/4W | VISHAY | TO-263AB(D2PAK) | 0 | $ 1.3211 | ||
| VB20150S-E3/4W | VISHAY | TO-263AB(D2PAK) | 0 | $ 1.4489 | ||
| VB20150S-M3/8W | VISHAY | TO-263AB(D2PAK) | 0 | $ 1.6337 | ||
| VB20150S-M3/4W | VISHAY | TO-263AB(D2PAK) | 0 | $ 1.6337 | ||
| SRAS20150H | Taiwan Semiconductor | TO-263AB(D2PAK) | 0 | $ 1.3436 | ||
| SRAS20150 | Taiwan Semiconductor | TO-263AB(D2PAK) | 0 | $ 1.2618 | ||
| MBRB20300S | Suzhou Good-Ark Elec | TO-263(D2PAK) | 0 | $ 0.5606 |