VISHAY SIHFR9310TR-GE3
| Producent | |
| Nr części prod. | SIHFR9310TR-GE3 |
| Nr LCSC | C6816652 |
| Opak. | TO-252AA |
| Numer Klienta | |
| Klucz. cechy | 400V 1.8A 4V 50W 7Ω@10V 1 P-Channel TO-252AA Single FETs, MOSFETs RoHS |
| Karta Katalogowa | VISHAY SIHFR9310TR-GE3 |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-252AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Current - Continuous Drain(Id) | 1.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-252AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Current - Continuous Drain(Id) | 1.8A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V |
Opis
The third generation power MOSFETs use advanced processing techniques to achieve low on-resistance per unit area of silicon. This advantage, combined with the well-known fast switching speed and rugged device design of power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The DPAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. The straight-lead version (IRFU/SiHFU series) is suitable for through-hole mounting applications. In typical surface mount applications, power dissipation levels of up to 1.5 W can be achieved.
Funkcje
- Advanced process technology
- Fully avalanche rated
- Surface mount (IRFR9310, SiHFR9310)
- Straight lead (IRFU9310, SiHFU9310)
- P-channel
- Fast switching
- RoHS compliant
- Halogen-free
Zastosowania
- Motor/body load control
- Anti-lock Braking System (ABS)
- Powertrain management
- Injection systems
- DC-DC converters and off-line UPS
- Distributed power architectures and VRM
- Primary switching for 12V and 24V systems
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.927 | $ 1.93 |
| 200+ | $ 0.7699 | $ 153.98 |
| 500+ | $ 0.7445 | $ 372.25 |
| 1,000+ | $ 0.7318 | $ 731.80 |
Standardowa Obudowa2000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-252AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Current - Continuous Drain(Id) | 1.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-252AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 400V | |
| Current - Continuous Drain(Id) | 1.8A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V |
Opis
The third generation power MOSFETs use advanced processing techniques to achieve low on-resistance per unit area of silicon. This advantage, combined with the well-known fast switching speed and rugged device design of power MOSFETs, provides designers with an extremely efficient and reliable device suitable for a wide range of applications. The DPAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. The straight-lead version (IRFU/SiHFU series) is suitable for through-hole mounting applications. In typical surface mount applications, power dissipation levels of up to 1.5 W can be achieved.
Funkcje
- Advanced process technology
- Fully avalanche rated
- Surface mount (IRFR9310, SiHFR9310)
- Straight lead (IRFU9310, SiHFU9310)
- P-channel
- Fast switching
- RoHS compliant
- Halogen-free
Zastosowania
- Motor/body load control
- Anti-lock Braking System (ABS)
- Powertrain management
- Injection systems
- DC-DC converters and off-line UPS
- Distributed power architectures and VRM
- Primary switching for 12V and 24V systems
C6816652 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IRFR9310PBF-VB | VBsemi Elec | TO-252 | 96 | $ 1.41 | ||
| CMD3P50A | Cmos | TO-252 | 2,115 | $0.3496 $0.368 | ||
| DMP45H4D9HK3-13 | DIODES | TO-252 | 10 | $ 1.143 | ||
| FQD3P50TM | onsemi | TO-252-2 | 1,623 | $ 1.1689 | ||
| IXTY2P50PA | Littelfuse/IXYS | TO-252 | 22 | $ 11.6835 | ||
| FQD3P50TM-VB | VBsemi Elec | TO-252 | 15 | $ 1.4922 | ||
| IRFR9310TRLPBF-BE3 | VISHAY | TO-252AA | 0 | $ 0.9305 | ||
| SIHFR9310-GE3 | VISHAY | TO-252AA | 0 | $ 0.3698 | ||
| SIHFR9310TRL-GE3 | VISHAY | TO-252AA | 0 | $ 0.6819 | ||
| IRFR9310TRLPBF | VISHAY | DPAK | 0 | $ 0.9469 |