MICROCHIP SST39VF6401B-70-4I-EKE-T

The SST39VF640xB devices are 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thickoxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF640xB write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST39VF640xB devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF640xB devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet high-density, surface mount requirements, the SST39VF640xB devices are offered in 48-lead TSOP and 48-ball TFBGA packages.

• Organized as 4M x16
• Single Voltage Read and Write Operations – 2.7-3.6V
• Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 32 KWord) for SST39VF6402B – Bottom Block-Protection (bottom 32 KWord) for SST39VF6401B
• Sector-Erase Capability – Uniform 2 KWord sectors
• Block-Erase Capability – Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature – Microchip: 128 bits; User: 128 bits
• Fast Read Access Time: – 70 ns
• Latched Address and Data
• Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical)
• Automatic Write Timing – Internal VPP Generation
• End-of-Write Detection – Toggle Bits – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard – Flash EEPROM Pin Assignments – Software command sequence compatibility - Address format is 11 bits, A₁₀ - A₀ - Block-Erase 6th Bus Write Cycle is 30H - Sector-Erase 6th Bus Write Cycle is 50H
• Packages Available – 48-lead TSOP (12mmx20mm) – 48-ball TFBGA (8mm x 10mm)
• All devices are RoHS compliant