Infineon/CYPRESS CY15B116QSN-108BKXI
| Hersteller | |
| Herst.-Teilenr. | CY15B116QSN-108BKXI |
| LCSC-Nr. | C6170265 |
| Verp. | FBGA-24(6x8) |
| Kundennummer | |
| Hauptmerkm. | 16Mbit 108MHz SPI FBGA-24(6x8) Memory RoHS |
| Datenblatt | Infineon/CYPRESS CY15B116QSN-108BKXI |
| Alternativteile | 3 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Sleep mode current (Izz) | 1.1uA | |
| Memory Size | 16Mbit | |
| Voltage - Supply | 1.8V~3.6V;14mA;22mA | |
| Program / Erase Cycles | 100,000,000,000,000 Cycles | |
| Clock Frequency | 108MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 115uA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Sleep mode current (Izz) | 1.1uA | |
| Memory Size | 16Mbit |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Supply | 1.8V~3.6V;14mA;22mA | |
| Program / Erase Cycles | 100,000,000,000,000 Cycles | |
| Clock Frequency | 108MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 115uA | |
| Interface | SPI |
Beschreibung
The EXCELON Ultra CY15x116QSN is a 16Mb nonvolatile memory device built on an advanced ferroelectric process. Ferroelectric RAM is nonvolatile and performs reads and writes like RAM. It delivers reliable data retention while eliminating the complexity, overhead, and system-level reliability concerns associated with serial Flash and other nonvolatile memories. Unlike serial Flash, the CY15x116QSN executes write operations at bus speed with no write delays. Data is written to the memory array immediately upon successful transfer to the device, enabling the next bus cycle to begin without data polling. In addition, the device offers significantly higher write endurance than other nonvolatile memories. The CY15x116QSN supports an extremely high number of read and write cycles. These characteristics make it well suited for nonvolatile memory applications requiring frequent or high-speed writes. The CY15x116QSN combines 16Mb F-RAM with a high-speed quad-wire SPI interface, enhancing the nonvolatile write capability of ferroelectric memory technology. The device includes read-only device identification and ID features that allow the SPI bus master to determine the manufacturer, product density, product revision, and the ID of each unit. The device also provides a read-only serial number that can be used to identify a board or system. The device supports on-chip ECC logic capable of detecting and correcting 2-bit errors within every 8-byte unit of data. It further extends this capability to report 3-bit errors within an 8-byte data unit. The CY15x116QSN also supports a CRC function that can be used to verify the integrity of data in the memory array.
Merkmale
- 16Mb FRAM, organized as 2048K × 8
- Extremely high read/write cycle endurance
- Extended data retention
- Instant nonvolatile write technology
- High-reliability ferroelectric process
- Single and multi-line serial peripheral interface
- SPI protocol support
- SPI mode 0 and mode 3 support for all single data rate mode transfers
- SPI mode 0 support for all dual data rate mode transfers
- Extended I/O SPI protocol support
- Dual SPI protocol support
- Quad SPI protocol support
- SPI clock frequency up to 108 MHz
- Execute-in-place read/write support
- Hardware protection via write protect pin
- Software block protection
- Embedded ECC and CRC for enhanced data integrity
- ECC detects and corrects 2-bit errors; reports but does not correct 3-bit errors
- CRC detects any unintended changes to original data
- Extended electronic signature including device ID and identification
- User-programmable serial number
- Dedicated 256-byte special sector
- Dedicated special sector write and read operations
- Content survives multiple standard reflow cycles
- Low power consumption at high speed — low typical active current, low typical standby current, low typical deep power-down current, and ultra-low typical sleep mode current
- Low-voltage operation with support for multiple supply voltage ranges
- Operating temperature range: -40°C to +85°C
- 24-ball fine-pitch BGA package
- RoHS compliant
Anwendungen
- Data Acquisition
- Industrial Control
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 28.8297 | $ 28.83 |
| 30+ | $ 27.4822 | $ 824.47 |
Standardgehäuse480/Full Tray | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Sleep mode current (Izz) | 1.1uA | |
| Memory Size | 16Mbit | |
| Voltage - Supply | 1.8V~3.6V;14mA;22mA | |
| Program / Erase Cycles | 100,000,000,000,000 Cycles | |
| Clock Frequency | 108MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 115uA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon/CYPRESS | |
| Verp. | FBGA-24(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Sleep mode current (Izz) | 1.1uA | |
| Memory Size | 16Mbit |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Supply | 1.8V~3.6V;14mA;22mA | |
| Program / Erase Cycles | 100,000,000,000,000 Cycles | |
| Clock Frequency | 108MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 115uA | |
| Interface | SPI |
Beschreibung
The EXCELON Ultra CY15x116QSN is a 16Mb nonvolatile memory device built on an advanced ferroelectric process. Ferroelectric RAM is nonvolatile and performs reads and writes like RAM. It delivers reliable data retention while eliminating the complexity, overhead, and system-level reliability concerns associated with serial Flash and other nonvolatile memories. Unlike serial Flash, the CY15x116QSN executes write operations at bus speed with no write delays. Data is written to the memory array immediately upon successful transfer to the device, enabling the next bus cycle to begin without data polling. In addition, the device offers significantly higher write endurance than other nonvolatile memories. The CY15x116QSN supports an extremely high number of read and write cycles. These characteristics make it well suited for nonvolatile memory applications requiring frequent or high-speed writes. The CY15x116QSN combines 16Mb F-RAM with a high-speed quad-wire SPI interface, enhancing the nonvolatile write capability of ferroelectric memory technology. The device includes read-only device identification and ID features that allow the SPI bus master to determine the manufacturer, product density, product revision, and the ID of each unit. The device also provides a read-only serial number that can be used to identify a board or system. The device supports on-chip ECC logic capable of detecting and correcting 2-bit errors within every 8-byte unit of data. It further extends this capability to report 3-bit errors within an 8-byte data unit. The CY15x116QSN also supports a CRC function that can be used to verify the integrity of data in the memory array.
Merkmale
- 16Mb FRAM, organized as 2048K × 8
- Extremely high read/write cycle endurance
- Extended data retention
- Instant nonvolatile write technology
- High-reliability ferroelectric process
- Single and multi-line serial peripheral interface
- SPI protocol support
- SPI mode 0 and mode 3 support for all single data rate mode transfers
- SPI mode 0 support for all dual data rate mode transfers
- Extended I/O SPI protocol support
- Dual SPI protocol support
- Quad SPI protocol support
- SPI clock frequency up to 108 MHz
- Execute-in-place read/write support
- Hardware protection via write protect pin
- Software block protection
- Embedded ECC and CRC for enhanced data integrity
- ECC detects and corrects 2-bit errors; reports but does not correct 3-bit errors
- CRC detects any unintended changes to original data
- Extended electronic signature including device ID and identification
- User-programmable serial number
- Dedicated 256-byte special sector
- Dedicated special sector write and read operations
- Content survives multiple standard reflow cycles
- Low power consumption at high speed — low typical active current, low typical standby current, low typical deep power-down current, and ultra-low typical sleep mode current
- Low-voltage operation with support for multiple supply voltage ranges
- Operating temperature range: -40°C to +85°C
- 24-ball fine-pitch BGA package
- RoHS compliant
Anwendungen
- Data Acquisition
- Industrial Control
C6170265 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| CY15B116QSN-108BKXQ | Infineon | FBGA-24(6x8) | 0 | $ 65.3453 | ||
| CY15B116QSN-108BKXQT | Infineon | FBGA-24(6x8) | 0 | $ 122.0322 | ||
| CY15B116QSN-108BKXIT | Infineon | FBGA-24(6x8) | 0 | $ 128.3028 |

