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MXIC MX25V1006EZUI-13G

Produttore
Cod. Prod.
MX25V1006EZUI-13G
Cod. LCSC
C5800876
Imballo
USON-8(3x2)
Numero Cliente
Attr. chiave
1Mbit 2.3V~3.6V 75MHz SPI USON-8(3x2) Memory RoHS
Scheda TecnicaMXIC MX25V1006EZUI-13G
Parti alternative10
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 0.8435$ 0.84
200+$ 0.3368$ 67.36
500+$ 0.3254$ 162.70
1,000+$ 0.3206$ 320.60
Package Standard12000/Full Reel
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreMXIC
ImballoUSON-8(3x2)
Operating Temperature-40℃~+85℃
Features-
Memory Size1Mbit
Voltage - Supply2.3V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency75MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)600us
Standby Supply Current13uA
InterfaceSPI

Descrizione

Traduzione AI

MX25V1006E is a CMOS 1,048,576 bit serial Flash memory, which is configured as 131,072 x 8 internally. MX25V1006E features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. MX25V1006E provides sequential read operation on whole chip.

Caratteristiche

Traduzione AI
  • Supports Serial Peripheral Interface -- Mode 0 and Mode 3
  • 1,048,576x1 bit structure or 524,288x2 bits (Dual Output mode) Structure
  • 32 Equal Sectors with 4K byte each - Any Sector can be erased individually
  • 2 Equal Blocks with 64K byte each - Any Block can be erased individually
  • Single Power Supply Operation - 2.35 to 3.6 volt for read, erase, and program operations
  • Latch-up protected to 100mA from -1V to Vcc +1V
  • High Performance - Fast access time: 75MHz serial clock - Serial clock of Dual Output mode: 70MHz - Fast program time: 0.6ms(typ.) and 1ms(max.)/page (256-byte per page) - Byte program time: 9us - Fast erase time: 40ms(typ.)/sector (4K-byte per sector) ; 0.8s(typ.) and 2s(max.)/chip
  • Low Power Consumption - Low active read current: 12mA(max.) at 75MHz and 4mA(max.) at 33MHz - Low active programming current: 13mA (typ.) - Low active sector erase current: 9mA (typ.) - Low standby current: 13uA (typ.) - Deep power-down mode: 0.8uA (typ.)
  • Minimum 100,000 erase/program cycles
  • 20 years data retention
  • Input Data Format - 1-byte Command code
  • Block Lock protection - The BP0-BP1 status bit defines the size of the area to be software protected against Program and Erase instructions.
  • Auto Erase and Auto Program Algorithm - Automatically erases and verifies data at selected sector - Automatically programs and verifies data at selected page by an internal algorithm that automatically times the program pulse widths (Any page to be programed should have page in the erased state first)
  • Status Register Feature
  • Electronic Identification - JEDEC 2-byte Device ID - RES command, 1-byte Device ID
  • SCLK Input - Serial clock input
  • SI/SIO0 - Serial Data Input or Serial Data Output for Dual output mode
  • SO/SIO1 - Serial Data Output or Serial Data Output for Dual output mode
  • WP# pin - Hardware write protection
  • HOLD# pin - pause the chip without diselecting the chip
  • PACKAGE - 8-USON (2x3mm) - 8-pin TSSOP (173mil) - 8-pin SOP (150mil) - All devices are RoHS compliant and Halogen-free

Parti alternative

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W25X10CLUXIGWinbondUSON-8-EP(2x3)5,368$ 1.3438
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AT25DF011-MAHN-TRENESASUDFN-8-EP(2x3)10$ 2.6615
P25Q11H-UXH-IRPUYAUSON-8(3x2)0$ 0.1012
MX25R1035FZUIL0TRMXICUSON-8(3x2)0$ 0.9536
AT25XE011-MAHN-TRENESASUDFN-8-EP(2x3)0$ 1.3213
IS25LP010E-JYLE-TRISSIUSON-8-EP(2x3)0$ 0.782
MX25V1006FZUI-TRMXICUSON-8(2x3)0$ 2.4219
AT25DN011-MAHF-TRENESASUDFN-8-EP(2x3)0$ 0.7783
AT25DF011-MAHNHR-TRENESASUDFN-8-EP(2x3)0$ 0.991