Infineon CY15V108QSN-108BKXIT

The EXCELON™ Ultra CY15x108QSN is a high-performance 8-megabit nonvolatile memory utilizing an advanced ferroelectric process. Ferroelectric RAM (F-RAM) is nonvolatile and performs read and write operations similarly to RAM. It delivers 151 years of reliable data retention while eliminating the complexity, overhead, and system-level reliability issues associated with serial flash and other nonvolatile memories. Unlike serial flash, the CY15x108QSN executes write operations at bus speed with no write delays. Once each byte is successfully transferred to the device, data is immediately written to the memory array, allowing the next bus cycle to begin without data polling. In addition, the device offers exceptional write endurance compared to other nonvolatile memories. The CY15x108QSN supports 10^14 read/write cycles — 100 million times more write cycles than EEPROM. These characteristics make the CY15x108QSN ideal for nonvolatile memory applications requiring frequent or high-speed writes, ranging from data acquisition where write cycle count may be critical, to demanding industrial control applications where the long write times of serial flash may result in data loss. The CY15x108QSN combines 8-megabit F-RAM with a high-speed quad-wire SPI (QPI) SDR and DDR interface, enhancing the nonvolatile write capability of F-RAM technology. The device includes a read-only device ID and ID feature that allows an SPI bus master to identify the manufacturer, product density, product revision, and the ID of each unit. A read-only serial number is also provided for board or system identification. The device supports on-chip ECC logic capable of detecting and correcting 2-bit errors per 8-byte data cell, as well as reporting 3-bit errors within an 8-byte data cell. The CY15x108QSN also supports a Cyclic Redundancy Check (CRC) function for verifying the integrity of data stored in the memory array.

• 8-Megabit F-RAM, logically organized as 1024K × 8
• Near-unlimited endurance: 100 trillion (10^14) read/write cycles
• 151-year data retention
• Infineon instant nonvolatile write technology
• Advanced high-reliability ferroelectric process
• Single- and multi-line I/O SPI
• Serial bus interface SPI protocol
• SPI mode 0 (0, 0) and mode 3 (1, 1) supporting all SDR mode transfers
• SPI mode 0 (0, 0) supporting all DDR mode transfers
• Extended I/O SPI protocol
• Dual-line SPI (DPI) protocol
• Quad-line SPI (QPI) protocol
• SPI clock frequency
• SPI SDR up to 108 MHz
• SPI DDR up to 46 MHz
• Execute-in-Place (XIP) for memory read/write
• Write protection, data security, and data integrity
• Hardware protection via write protect (WP) pin
• Software block protection
• Embedded ECC and CRC for enhanced data integrity
• ECC detects and corrects 2-bit errors; 3-bit errors are not corrected but reported via ECC status register
• CRC detects any unintended changes to original data
• Extended electronic signature
• Device ID includes manufacturer ID and product ID
• ID
• User-programmable serial number
• Dedicated 256-byte special sector F-RAM
• Dedicated special sector write and read
• Contents survive up to three standard reflow cycles
• Low power consumption at high speed
• Typical operating current 12 mA in 108 MHz SPI SDR mode
• Typical operating current 20 mA in 108 MHz QSPI SDR mode
• Typical operating current 15.5 mA in 46 MHz QSPI DDR mode
• Typical standby current 105 µA
• Typical deep power-down mode current 0.9 µA
• Typical hibernation mode current 0.1 µA
• Low-voltage operation
• CY15V108QSN: V_DD = 1.71 V ~ 1.89 V
• CY15B108QSN: V_DD = 1.8 V ~ 3.6 V
• Operating temperature: -40℃ ~ +85℃
• Package
• 24-ball Fine-pitch BGA (FBGA)
• RoHS compliant