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EDA-ModelleEasyEDA
Nexperia BUK9Y2R4-40HX
| Hersteller | |
| Herst.-Teilenr. | BUK9Y2R4-40HX |
| LCSC-Nr. | C550045 |
| Verp. | SOT-669 |
| Kundennummer | |
| Hauptmerkm. | 40V 120A 163W 2.4mΩ@10V 1 N-channel SOT-669 Single FETs, MOSFETs RoHS |
| Datenblatt | Nexperia BUK9Y2R4-40HX |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 7 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-669 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 163W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.544nF | |
| Gate Charge(Qg) | 78.2nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-669 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 163W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.544nF | |
| Gate Charge(Qg) | 78.2nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Automotive-grade N-channel MOSFET utilizing the latest Trench 9 low-ohmic superjunction technology, housed in a robust LFPAK56 package. Fully designed and qualified to AEC-Q101, delivering high performance and durability.
Merkmale
KI-Übersetzung
- Fully compliant with AEC-Q101 automotive standard
- Rated temperature up to 175 °C, suitable for high thermal dissipation environments
- Trench 9 super-junction technology:
- Reduced cell pitch enables higher power density and efficiency in the same package size while lowering RDSon
- Improved SOA and avalanche capability compared to standard trench MOS
- Tight VGS(th) limits for easy paralleling of MOSFETs
- LFPAK gull-wing leads:
- High board-level reliability with mechanical stress absorption during thermal cycling, unlike conventional QFN packages
- Visual (AOI) solder inspection capability without expensive X-ray equipment
- Easy solder wetting for reliable mechanical solder joints
- LFPAK copper clip technology:
- Enhanced reliability with reduced thermal resistance Rth and RDSon
- Increased maximum current capability and improved current distribution
Anwendungen
KI-Übersetzung
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Start-stop mild hybrid applications
- Transmission control
- Ultra-high-performance power switching
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.5963 | $ 1.60 |
| 200+ | $ 0.6176 | $ 123.52 |
| 500+ | $ 0.5959 | $ 297.95 |
| 1,500+ | $ 0.5851 | $ 877.65 |
Standardgehäuse1500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-669 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 163W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.544nF | |
| Gate Charge(Qg) | 78.2nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | SOT-669 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 163W | |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.544nF | |
| Gate Charge(Qg) | 78.2nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Automotive-grade N-channel MOSFET utilizing the latest Trench 9 low-ohmic superjunction technology, housed in a robust LFPAK56 package. Fully designed and qualified to AEC-Q101, delivering high performance and durability.
Merkmale
KI-Übersetzung
- Fully compliant with AEC-Q101 automotive standard
- Rated temperature up to 175 °C, suitable for high thermal dissipation environments
- Trench 9 super-junction technology:
- Reduced cell pitch enables higher power density and efficiency in the same package size while lowering RDSon
- Improved SOA and avalanche capability compared to standard trench MOS
- Tight VGS(th) limits for easy paralleling of MOSFETs
- LFPAK gull-wing leads:
- High board-level reliability with mechanical stress absorption during thermal cycling, unlike conventional QFN packages
- Visual (AOI) solder inspection capability without expensive X-ray equipment
- Easy solder wetting for reliable mechanical solder joints
- LFPAK copper clip technology:
- Enhanced reliability with reduced thermal resistance Rth and RDSon
- Increased maximum current capability and improved current distribution
Anwendungen
KI-Übersetzung
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Start-stop mild hybrid applications
- Transmission control
- Ultra-high-performance power switching
C550045 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| PSMN2R8-40YSDX | Nexperia | SOT-669 | 50 | $ 2.8762 | ||
| PSMN1R5-40YSDX | Nexperia | SOT-669 | 38 | $ 2.0731 | ||
| PSMN2R5-40YLDX | Nexperia | SOT-669 | 0 | $ 1.5979 | ||
| PSMN2R2-40YSDX | Nexperia | SOT-669 | 0 | $ 1.3443 | ||
| PSMN1R9-40YSDX | Nexperia | SOT-669 | 0 | $ 1.6608 | ||
| BUK9Y1R9-40HX | Nexperia | SOT-669 | 0 | $ 1.3322 | ||
| BUK9Y1R3-40HX | Nexperia | SOT-669 | 0 | $ 2.4702 |