Nexperia PRMB11Z
| Hersteller | |
| Herst.-Teilenr. | PRMB11Z |
| LCSC-Nr. | C547320 |
| Verp. | SOT1268 |
| Kundennummer | |
| Hauptmerkm. | 50V 30 100mA 480mW PNP 2 PNP Pre-Biased Transistors SOT1268 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | Nexperia PRMB11Z |
| RoHS-Konformität | 1 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT1268 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 480mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT1268 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 480mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
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Beschreibung
KI-Übersetzung
Dual PNP resistor-equipped transistor (RET) in an ultra-small DFN1412-6 (SOT1268) leadless SMD plastic package. NPN/NPN complementary type: PRMH11. NPN/PNP complementary type: PRMD3.
Merkmale
KI-Übersetzung
- Output current capability up to 100 mA
- Built-in bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- Package height as low as 0.5 mm
- AEC-Q101 qualified
Anwendungen
KI-Übersetzung
- Digital Applications
- Cost-saving replacement for BC847/BC857 series in digital applications
- IC input control
- Switching loads
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0196 | $ 0.02 |
| 10+ | $ 0.0153 | $ 0.15 |
| 30+ | $ 0.013 | $ 0.39 |
| 100+ | $ 0.0116 | $ 1.16 |
| 500+ | $ 0.0103 | $ 5.15 |
| 1,000+ | $ 0.0097 | $ 9.70 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT1268 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 480mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT1268 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 480mW | |
| Voltage - Input(Max)(VI(off)) | 1.1V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Dual PNP resistor-equipped transistor (RET) in an ultra-small DFN1412-6 (SOT1268) leadless SMD plastic package. NPN/NPN complementary type: PRMH11. NPN/PNP complementary type: PRMD3.
Merkmale
KI-Übersetzung
- Output current capability up to 100 mA
- Built-in bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- Package height as low as 0.5 mm
- AEC-Q101 qualified
Anwendungen
KI-Übersetzung
- Digital Applications
- Cost-saving replacement for BC847/BC857 series in digital applications
- IC input control
- Switching loads
C547320 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

