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EDA-ModelleEasyEDA
Cmos CMSC6683A
| Hersteller | CmosAsian Brands |
| Herst.-Teilenr. | CMSC6683A |
| LCSC-Nr. | C54443167 |
| Verp. | DFN-8(3.3x3.3) |
| Kundennummer | |
| Hauptmerkm. | 55W 20V 54A 1V 8.5mΩ@4.5V 1 P-Channel P-Channel DFN-8(3.3x3.3) Single FETs, MOSFETs |
| Datenblatt | Cmos CMSC6683A |
| Alternativteile | 6 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 470pF | |
| Pd - Power Dissipation | 55W | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 54A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF | |
| RDS(on) | 8.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 470pF | |
| Pd - Power Dissipation | 55W | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 54A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF | |
| RDS(on) | 8.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CMSC6683A utilizes advanced trench technology to deliver excellent on-resistance RDS(ON). The device is well suited for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- P-channel MOSFET
- Low on-resistance
- Surface mount package
- RoHS compliant
- P-channel MOSFET: -20V, 8.5mΩ typical, -54A
Anwendungen
KI-Übersetzung
Load/Power Switch for Portable Devices
Vorrätig: 200
200 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1539$ 0.1463 | $ 0.73 |
| 50+ | $ 0.125$ 0.1188 | $ 5.94 |
| 150+ | $ 0.1105$ 0.1050 | $ 15.75 |
| 500+ | $ 0.0997$ 0.0948 | $ 47.40 |
| 2,500+ | $ 0.091$ 0.0865 | $ 216.25 |
| 5,000+ | $ 0.0867$ 0.0824 | $ 412.00 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 470pF | |
| Pd - Power Dissipation | 55W | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 54A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF | |
| RDS(on) | 8.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | DFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 470pF | |
| Pd - Power Dissipation | 55W | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 54A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF | |
| RDS(on) | 8.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CMSC6683A utilizes advanced trench technology to deliver excellent on-resistance RDS(ON). The device is well suited for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- P-channel MOSFET
- Low on-resistance
- Surface mount package
- RoHS compliant
- P-channel MOSFET: -20V, 8.5mΩ typical, -54A
Anwendungen
KI-Übersetzung
Load/Power Switch for Portable Devices
C54443167 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |