Infineon IRLU9343PBF
| Producent | |
| Nr części prod. | IRLU9343PBF |
| Nr LCSC | C538196 |
| Opak. | TO-251 |
| Numer Klienta | |
| Klucz. cechy | 79W 55V 20A 1V 93mΩ@10V 1 P-Channel P-Channel TO-251 Single FETs, MOSFETs |
| Karta Katalogowa | Infineon IRLU9343PBF |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-251 | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-251 | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Opis
This Digital Audio HEXFET is specifically designed for Class-D audio amplifie applications. This MosFET utlizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Funkcje
- Advanced Process Technology
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low Rpson for Improved Efficiency
- Low Qg and Qsw for Better THD and Improved Efficiency
- Low Qrr for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Multiple Package Options
- Lead-Free
Zastosowania
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.1175 | $ 1.12 |
| 200+ | $ 0.4338 | $ 86.76 |
| 500+ | $ 0.4183 | $ 209.15 |
| 1,000+ | $ 0.4106 | $ 410.60 |
Standardowa Obudowa3000/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-251 | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-251 | |
| Output Capacitance(Coss) | 160pF | |
| Pd - Power Dissipation | 79W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Opis
This Digital Audio HEXFET is specifically designed for Class-D audio amplifie applications. This MosFET utlizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Funkcje
- Advanced Process Technology
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low Rpson for Improved Efficiency
- Low Qg and Qsw for Better THD and Improved Efficiency
- Low Qrr for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Multiple Package Options
- Lead-Free
Zastosowania
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
C538196 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| SPU09P06PL-VB | VBsemi Elec | TO-251 | 39 | $0.4319 $0.5081 | ||
| FU9024N-VB | VBsemi Elec | TO-251 | 2 | $0.4169 $0.4904 | ||
| AP9575GJ-HF-VB | VBsemi Elec | TO-251 | 6 | $0.4319 $0.5081 | ||
| SFT1341-VB | VBsemi Elec | TO-251 | 10 | $0.4225 $0.497 | ||
| FQU11P06TU-JSM | JSMSEMI | TO-251 | 450 | $ 0.3724 | ||
| CMU5941 | Cmos | TO-251 | 5 | $0.2617 $0.2754 | ||
| VBZFB40P06 | VBsemi Elec | TO-251 | 9 | $0.4759 $0.5598 | ||
| IRLU9343PBF-VB | VBsemi Elec | TO-251 | 8 | $0.4438 $0.5221 | ||
| 2SJ635.-VB | VBsemi Elec | TO-251 | 0 | $ 0.5816 | ||
| IRFU9024PBF-VB | VBsemi Elec | TO-251 | 0 | $ 0.6875 |