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UMW AO6601
| Producent | UMWAsian Brands |
| Nr części prod. | AO6601 |
| Nr LCSC | C5375977 |
| Opak. | SOT-23-6 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH+P-CH ARR 30V 3.4A SOT-23-6 |
| Karta Katalogowa | UMW AO6601 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | UMW | |
| Opak. | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 35pF;37pF | |
| Current - Continuous Drain(Id) | 3.4A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.15W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;20pF | |
| RDS(on) | 46mΩ@10V;88mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 235pF;260pF | |
| Gate Charge(Qg) | 10nC@10V;5.9nC@10V | |
| Type | N-Channel + P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | UMW | |
| Opak. | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 35pF;37pF | |
| Current - Continuous Drain(Id) | 3.4A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.15W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;20pF | |
| RDS(on) | 46mΩ@10V;88mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 235pF;260pF | |
| Gate Charge(Qg) | 10nC@10V;5.9nC@10V | |
| Type | N-Channel + P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The AO6601 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. Complementary MOSFETs form high-speed power inverters suitable for a wide range of applications.
Funkcje
Tłumaczenie AI
- VDS(V) = -30 V
- ID = -2.3 A (VGS = -10 V)
- RDS(ON) < 115 mΩ (VGS = -10 V)
- VDS(V) = 30 V, ID = 3.4 A (VGS = 10 V)
- RDS(ON) < 60 mΩ (VGS = 10 V)
- RDS(ON) < 70 mΩ (VGS = 4.5 V)
- RDS(ON) < 90 mΩ (VGS = 2.5 V)
- RDS(ON) < 150 mΩ (VGS = -4.5 V)
- RDS(ON) < 200 mΩ (VGS = -2.5 V)
Na stanie: 7,275
7,275 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.0689 | $ 0.34 |
| 50+ | $ 0.0602 | $ 3.01 |
| 150+ | $ 0.0558 | $ 8.37 |
| 500+ | $ 0.0526 | $ 26.30 |
| 3,000+ | $ 0.05 | $ 150.00 |
| 6,000+ | $ 0.0487 | $ 292.20 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | UMW | |
| Opak. | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 35pF;37pF | |
| Current - Continuous Drain(Id) | 3.4A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.15W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;20pF | |
| RDS(on) | 46mΩ@10V;88mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 235pF;260pF | |
| Gate Charge(Qg) | 10nC@10V;5.9nC@10V | |
| Type | N-Channel + P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | UMW | |
| Opak. | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 35pF;37pF | |
| Current - Continuous Drain(Id) | 3.4A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.15W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;20pF | |
| RDS(on) | 46mΩ@10V;88mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 235pF;260pF | |
| Gate Charge(Qg) | 10nC@10V;5.9nC@10V | |
| Type | N-Channel + P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The AO6601 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. Complementary MOSFETs form high-speed power inverters suitable for a wide range of applications.
Funkcje
Tłumaczenie AI
- VDS(V) = -30 V
- ID = -2.3 A (VGS = -10 V)
- RDS(ON) < 115 mΩ (VGS = -10 V)
- VDS(V) = 30 V, ID = 3.4 A (VGS = 10 V)
- RDS(ON) < 60 mΩ (VGS = 10 V)
- RDS(ON) < 70 mΩ (VGS = 4.5 V)
- RDS(ON) < 90 mΩ (VGS = 2.5 V)
- RDS(ON) < 150 mΩ (VGS = -4.5 V)
- RDS(ON) < 200 mΩ (VGS = -2.5 V)
C5375977 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |