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Infineon IPP60R170CFD7

Producent
Nr części prod.
IPP60R170CFD7
Nr LCSC
C537207
Opak.
TO-220-3
Numer Klienta
Klucz. cechy
75W 650V 9A 4.5V 170mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
Karta KatalogowaInfineon IPP60R170CFD7
Zgodność z RoHS1 dokumentów dostępnych
Części alternatywne10
Na stanie: 14
14 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.Suma całkowita
1+$ 2.5491$ 2.55
10+$ 2.5052$ 25.05
30+$ 2.476$ 74.28
100+$ 2.4451$ 244.51
Standardowa Obudowa500/Full Tube
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProducentInfineon
Opak.TO-220-3
Output Capacitance(Coss)22pF
Pd - Power Dissipation75W
Operating Temperature-55℃~+150℃
Configuration-
Drain to Source Voltage650V
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4.5V
Reverse Transfer Capacitance (Crss@Vds)402pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.199nF
Gate Charge(Qg)28nC@10V
Vgs±20V
TypeN-Channel

Opis

Tłumaczenie AI

CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. Thanks to reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves maximum efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product series combines all the advantages of fast switching technology with excellent hard-commutation robustness, while being easy to implement during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability, and supports high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and more energy-saving.

Funkcje

Tłumaczenie AI
  • Ultra-fast body diode
  • Low gate charge
  • Best-in-class reverse recovery charge (Qrr)
  • Improved dv/dt and diF/dt robustness of MOSFET body diode
  • Lowest figure-of-merit RDS(ON)*Qg and RDS(ON)*Eoss
  • Best-in-class RDS(ON) in SMD and THD packages

Zastosowania

Tłumaczenie AI
  • Soft-switching topology
  • Phase-shifted full bridge (ZVS), LLC applications — servers, telecom, EV charging
  • Industrial applications

Części alternatywne

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FCP260N65S3onsemiTO-22050$ 2.9162
JCS10N70FHJilin Sino-MicroelectronicsTO-220MF295$ 0.858
IPP65R190CFD7AAKSA1InfineonTO-220-30$ 3.3611
IXTP20N65X2MLittelfuse/IXYSTO-2200$ 3.8775
FCPF250N65S3L1-F154onsemiTO-2200$ 1.795
AOT25S65LAOSTO-2200$ 3.0592
IPP65R310CFDInfineonTO-2200$ 3.9641