Infineon IPP60R170CFD7
| Producent | |
| Nr części prod. | IPP60R170CFD7 |
| Nr LCSC | C537207 |
| Opak. | TO-220-3 |
| Numer Klienta | |
| Klucz. cechy | 75W 650V 9A 4.5V 170mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Infineon IPP60R170CFD7 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 75W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 75W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Opis
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. Thanks to reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves maximum efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product series combines all the advantages of fast switching technology with excellent hard-commutation robustness, while being easy to implement during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability, and supports high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and more energy-saving.
Funkcje
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt robustness of MOSFET body diode
- Lowest figure-of-merit RDS(ON)*Qg and RDS(ON)*Eoss
- Best-in-class RDS(ON) in SMD and THD packages
Zastosowania
- Soft-switching topology
- Phase-shifted full bridge (ZVS), LLC applications — servers, telecom, EV charging
- Industrial applications
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.5491 | $ 2.55 |
| 10+ | $ 2.5052 | $ 25.05 |
| 30+ | $ 2.476 | $ 74.28 |
| 100+ | $ 2.4451 | $ 244.51 |
Standardowa Obudowa500/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 75W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 75W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Opis
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. Thanks to reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves maximum efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product series combines all the advantages of fast switching technology with excellent hard-commutation robustness, while being easy to implement during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability, and supports high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and more energy-saving.
Funkcje
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt robustness of MOSFET body diode
- Lowest figure-of-merit RDS(ON)*Qg and RDS(ON)*Eoss
- Best-in-class RDS(ON) in SMD and THD packages
Zastosowania
- Soft-switching topology
- Phase-shifted full bridge (ZVS), LLC applications — servers, telecom, EV charging
- Industrial applications
C537207 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| WTM20N65CP | WPMtek | TO-220 | 50 | $ 1.4279 | ||
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| IXTP20N65X2M | Littelfuse/IXYS | TO-220 | 0 | $ 3.8775 | ||
| FCPF250N65S3L1-F154 | onsemi | TO-220 | 0 | $ 1.795 | ||
| AOT25S65L | AOS | TO-220 | 0 | $ 3.0592 | ||
| IPP65R310CFD | Infineon | TO-220 | 0 | $ 3.9641 |

