Infineon IPC90N04S5-3R6
| Hersteller | |
| Herst.-Teilenr. | IPC90N04S5-3R6 |
| LCSC-Nr. | C536706 |
| Verp. | TDSON-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 90A TDSON-8 |
| Datenblatt | Infineon IPC90N04S5-3R6 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 32.6nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 32.6nC@10V |
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Merkmale
KI-Übersetzung
- OptiMOS - power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.3265 | $ 2.33 |
| 10+ | $ 2.2891 | $ 22.89 |
| 30+ | $ 2.2648 | $ 67.94 |
| 100+ | $ 2.2388 | $ 223.88 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 32.6nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 32.6nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- OptiMOS - power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
C536706 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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