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Minos MD20N65
| Produttore | MinosAsian Brands |
| Cod. Prod. | MD20N65 |
| Cod. LCSC | C5352770 |
| Imballo | TO-3P |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 650V 20A TO-3P |
| Scheda Tecnica | Minos MD20N65 |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Minos | |
| Imballo | TO-3P | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.12nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Minos | |
| Imballo | TO-3P | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.12nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
MD20N65 is a silicon N-channel enhancement-mode MOSFET fabricated using advanced MOSFET technology, offering reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is suitable for switched-mode power supplies, high-speed switching, and general-purpose applications.
Caratteristiche
Traduzione AI
- VDS = 650 V, R\text dson < 460 mΩ (at VGS = 10 V, ID = 20 A, typical 390 mΩ)
- Fast switching
- Low Crss (typical 15 pF)
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Applicazioni
Traduzione AI
- High-frequency switch-mode power supplies
Disponibile: 58
58 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.9812 | $ 0.98 |
| 10+ | $ 0.8055 | $ 8.06 |
| 30+ | $ 0.6721 | $ 20.16 |
| 90+ | $ 0.5842 | $ 52.58 |
| 510+ | $ 0.5321 | $ 271.37 |
| 990+ | $ 0.5061 | $ 501.04 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Minos | |
| Imballo | TO-3P | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.12nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Minos | |
| Imballo | TO-3P | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 390mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.12nF | |
| Gate Charge(Qg) | 62nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
MD20N65 is a silicon N-channel enhancement-mode MOSFET fabricated using advanced MOSFET technology, offering reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is suitable for switched-mode power supplies, high-speed switching, and general-purpose applications.
Caratteristiche
Traduzione AI
- VDS = 650 V, R\text dson < 460 mΩ (at VGS = 10 V, ID = 20 A, typical 390 mΩ)
- Fast switching
- Low Crss (typical 15 pF)
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Applicazioni
Traduzione AI
- High-frequency switch-mode power supplies
C5352770 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MD20N60 | Minos | TO-3P-3 | 131 | $ 1.0489 |