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EDA-ModelleEasyEDA
AGMSEMI AGM303AP
| Hersteller | AGMSEMIAsian Brands |
| Herst.-Teilenr. | AGM303AP |
| LCSC-Nr. | C5349136 |
| Verp. | PDFN-8(3.3x3.3) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 90A PDFN-8(3.3x3.3) |
| Datenblatt | AGMSEMI AGM303AP |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 3 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 380pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 27nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 380pF | |
| Current - Continuous Drain(Id) | 90A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 27nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM303AP combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Anwendungen
KI-Übersetzung
- MB/VGA core voltage
- Secondary synchronous rectifier for switching power supply
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
Vorrätig: 350
350 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2841 | $ 1.42 |
| 50+ | $ 0.2284 | $ 11.42 |
| 150+ | $ 0.2045 | $ 30.68 |
| 500+ | $ 0.1747 | $ 87.35 |
| 2,500+ | $ 0.167 | $ 417.50 |
| 5,000+ | $ 0.159 | $ 795.00 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 380pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 27nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | PDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 380pF | |
| Current - Continuous Drain(Id) | 90A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 291pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 27nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM303AP combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Anwendungen
KI-Übersetzung
- MB/VGA core voltage
- Secondary synchronous rectifier for switching power supply
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
C5349136 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| AGM3012AP-CP | AGMSEMI | PDFN-8(3.3x3.3) | 5,650 | $ 0.3555 | ||
| AGM4025AP | AGMSEMI | PDFN-8(3.3x3.3) | 4,215 | $ 0.3 | ||
| AGM404AP | AGMSEMI | PDFN-8(3.3x3.3) | 10 | $ 0.1975 |